An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 6, 2009, Pages 1365-1368

  Ohki, Toshihiro ^a   Kikkawa, Toshihide ^a   Kanamura, Masahito ^a   Imanishi, Kenji ^a   Makiyama, Kozo ^a   Okamoto, Naoya ^a   Joshin, Kazukiyo ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CAP STRUCTURE; CURRENT COLLAPSE; ENHANCEMENT-MODE; GATE RECESS; HIGH BREAKDOWN VOLTAGE; HIGH OUTPUT POWER; MAXIMUM DRAIN CURRENT; OUTPUT POWER; SINGLE-CHIP;

DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; POWER AMPLIFIERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70349423750     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881533     Document Type: Conference Paper

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