Normally-off operation power AlGaN/GaN HFET

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 369-372

  Ikeda, Nariaki ^a   Li, Jiang ^a   Yoshida, Seikoh ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; FREQUENCIES; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HETEROINTERFACES; HETEROJUNCTION FIELD EFFECT TRANSISTORS (HEFT); RECESS GATE STRUCTURES; SHEET RESISTANCE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 4944265144     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/wct.2004.240214     Document Type: Conference Paper

References (7)

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2. O. Akutas, Z.F. Fan, S.N. Mohammad, A.E. Botchkarev, H. Morkoç, "High temperature characteristics of AlGaN/GaN modulation doped field effect transistors." Appl Phys Lett, Vol.69, pp.3872-3874, 1996.
3. W. Yang, J. Lu, M. Asifkhan, I. Adesida, "AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise." IEEE Trans Electron Devices, Vol.48, pp.581-585, 2001.
4. Seikoh. Yoshida, Hirotatsu Ishii, "A high power GaN-based field effect transistor for large current operation." Phys Status Solidi (a), Vol.188, pp.243-246, 2001.
5. Seikoh Yoshida, Jiang Li, Takahiro Wada, and Hironari Takehara "High-Power AlGaN/GaN HFET with a Lower On-state Resistance and a Higher Switching Time for an Inverter Circuit", in Proc. 15th ISPSD, pp.58-61, 2003.
6. Akira Endoh, Yoshimi Yamashita, Keiji Ikeda, Masataka Higashiwaki, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, and Takashi Mimura "Non-Recessed-gate enhancement-mode AlGaN/GaN HEMTs with high RF performance.", Extended abstracts of the 2003 International Conference on SSDM, Tokyo, 2003, pp.914-915.
7. V. Kumar, A. Kuliev, T. Tanaka, Y. Otoki, and I. Adesida "High transconductance enhancement -mode AlGaN/GaN HEMTs on SiC substrate", Electronics Letters , Volume: 39 Issue: 24, 2003 pp.1758-1760.