GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Uemoto, Yasuhiro ^a   Morita, Tatsuo ^a   Ikoshi, Ayanori ^a   Umeda, Hidekazu ^a   Matsuo, Hisayoshi ^a   Shimizu, Jun ^a   Hikita, Masahiro ^a   Yanagihara, Manabu ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-DIRECTIONAL; FAST RECOVERY DIODES; FORWARD VOLTAGE; GATE INJECTION; LATERAL DEVICE; LOW-POWER OPERATION; MOTOR DRIVE; PROCESSING TECHNOLOGIES; SI SUBSTRATES; SI-BASED;

ELECTRON DEVICES; GALLIUM NITRIDE; ION IMPLANTATION; SEMICONDUCTOR DIODES; SILICON;

GALLIUM ALLOYS;

EID: 77952397402     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424397     Document Type: Conference Paper

References (6)

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6. N. Ikeda, S. Kaya, J. Li, Y. Sato, S. Kato and S. Yoshida, "High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse", Int. Symp. Power. Semicond. Devices and ICs, pp.278 - 290, 2008.