Improved electrical properties of tin-oxide films by using ultralow-pressure sputtering process

Thin Solid Films

Volumn 518, Issue 4, 2009, Pages 1170-1173

  Huh, Myung Soo ^a,b,c   Yang, Bong Seop ^a,b   Lee, Joohei ^a,b   Heo, Jaeyeong ^a,b   Han, Sang Jin ^c   Yoon, Kapsoo ^d   Yang, Sung Hoon ^d   Hwang, Cheol Seong ^a,b   Kim, Hyeong Joon ^a,b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c AmorePacific Corporation   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

AFM; HRTEM; Tin oxide; ULPS; XPS; XRD

Indexed keywords

AFM; AMORPHOUS STRUCTURES; ELECTRICAL PROPERTY; FILM STRUCTURE; NANOCRYSTALLINES; SPUTTERING PRESSURES; SPUTTERING PROCESS; STRUCTURAL AND ELECTRICAL PROPERTIES; XPS; XRD;

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; THIN FILM TRANSISTORS; TIN; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 71749101339     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.05.051     Document Type: Article

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