Controlled electrical conductivity in SnO2 thin films by oxygen or hydrocarbon assisted atomic layer epitaxy

Journal of the Electrochemical Society

Volumn 146, Issue 1, 1999, Pages 189-193

  Utriainen, M ^a   Kovacs K ^a   Campbell, J M ^a   Niinisto L ^a   Reti F ^b  

^a AALTO UNIVERSITY   (Finland)

^b BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; OZONE; PARAFFINS; POINT DEFECTS; SEMICONDUCTING TIN COMPOUNDS; STOICHIOMETRY; THIN FILMS;

ATOMIC LAYER EPITAXY; HEXANE; TIN OXIDE;

SEMICONDUCTING FILMS;

EID: 0032710255     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391585     Document Type: Article

References (5)

1. T. Suntola, in Handbook of Crystal Growth, Vol. 3, D. T. J. Hurle, Editor, p. 601, Elsevier, Amsterdam (1994).
2. L. Niinistö, M. Ritala, and M. Leskelä, Mater. Sci. Eng., B, 41, 23 (1996).
3. H. Viirola and L. Niinistö, Thin Solid Films, 249, 144 (1994).
4. H. Viirola and L. Niinistö, Thin Solid Films, 251, 127 (1994).
5. S. Lehto, R. Lappalainen, H. Viirola, and L. Niinistö, Fresenius J. Anal. Chem., 355, 129 (1996).