High density Ru nanocrystal deposition for nonvolatile memory applications

Journal of Applied Physics

Volumn 101, Issue 12, 2007, Pages

  Farmer, Damon B ^a   Gordon, Roy G ^b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; COULOMB BLOCKADE; HYSTERESIS; LEAKAGE CURRENTS; NANOCRYSTALS; NONVOLATILE STORAGE;

FLOATING GATE MEMORY CELLS; FRENKEL POOLE EMISSION; NANOCRYSTAL DENSITY; NUCLEATING SURFACE;

RUTHENIUM;

EID: 34547347636     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2740351     Document Type: Article

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