Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 472-474

  Lee, Rinus Tek Po ^a   Lim, Andy Eu Jin ^a   Tan, Kian Ming ^a   Liow, Tsung Yang ^a   Chi, Dong Zhi ^b   Yeo, Yee CHia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

External resistance; FinFET; Platinum silicide; Schottky barrier; Silicon carbon; Sulfur

Indexed keywords

EXTERNAL RESISTANCE; FINFET; PLATINUM SILICIDE; SCHOTTKY BARRIER; SILICON CARBON;

CHARGE TRANSFER; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; ION EXCHANGE; PLATINUM; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS; SILICIDES;

SULFUR;

EID: 67349252265     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2017213     Document Type: Article

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