SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 19, Issue 1, 2009, Pages 323-330

Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement

(6) Sinha, Mantavya a,b Lee, Rinus T P a Devi, S Nandini a Lo, Guo Qiang b Chor, Eng Fong a Yeo, Yee Chia a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MICROELECTRONICS (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CMOS INTEGRATED CIRCUITS; FINFET; LOGIC GATES; SCHOTTKY BARRIER DIODES; SILICON; THRESHOLD VOLTAGE;

CONTACT TECHNOLOGIES; DRAIN-INDUCED BARRIER LOWERING; DRIVE CURRENT ENHANCEMENT; NICKEL DEPOSITION; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SHORT-CHANNEL EFFECT; SUBTHRESHOLD SWING;

SI-GE ALLOYS;

EID: 70549101297 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3118959 Document Type: Conference Paper

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.