An integrated methodology for accurate extraction of S/D series resistance components in nanoscale MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 149-152

  Kim, Seong Dong ^a   Narasimha, Shreesh ^b   Rim, Ken ^b  

^a IBM RESEARCH   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

PARASITIC LIMITATION; SOI MOSFET CHARACTERIZATION; SOURCE/DRAIN (S/D) SERIES RESISTANCE COMPONENTS;

CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); DRAIN CURRENT; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

CONTACT RESISTANCE;

EID: 33847742574     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S.-D. Kim, C.M. Park, and J.C.S. Woo,"Advanced model and analysis for series resistance in sub-100nm CMOS including poly depletion and overlap doping gradient effect," pp.723-726, IEDM2000.
2. K. Terada and H. Muta, 'A new method to determine effective MOSFET channel length," Jap. J. Appl. Phys., vol 18, pp.953-959. 1979.
3. J.G.J. Chern, P. Change, R.F. Motta, and N. Godinho, "A new method to determine MOSFET channel length," IEEE EDL, vol. EDL-1, pp. 170-173, 1980.
4. D.B. Scott, R.A. Chapman, C.-C Wei, S.S. Mahant-shetti, R.A. Haken, T.C. Holloway, "Titanium disilicide contact resistivity and its impact on 1-μm CMOS circuit performance," IEEE T-ED, vol. ED-34, No.3, pp. 562-574, 1987.
5. G. Baccarani and G.A. Sai-Halasz, "spreading resistance in submicron MOSFET's," IEEE EDL, EDL-4, No.2, pp.27-29, 1983.