Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain

IEEE Transactions on Electron Devices

Volumn 57, Issue 6, 2010, Pages 1279-1286

  Sinha, Mantavya ^a   Lee, Rinus Tek Po ^a   Chor, Eng Fong ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Al implant; Contact resistance; FinFET; NiSiGe; Series resistance

Indexed keywords

DRIVE CURRENTS; FILM MORPHOLOGY; FINFETS; HOLE CONDUCTION; PARASITIC SERIES RESISTANCE; SCHOTTKY BARRIER HEIGHTS; SERIES RESISTANCES; SHORT-CHANNEL EFFECT; SILICON GERMANIUM;

CONTACT RESISTANCE; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SILICON ALLOYS;

ALUMINUM;

EID: 77952695064     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2045682     Document Type: Article

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