Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation

Journal of the Electrochemical Society

Volumn 156, Issue 4, 2009, Pages

  Sinha, Mantavya ^a   Lee, Rinus T P ^a   Lohani, Anup ^b   Mhaisalkar, Subodh ^b   Chor, Eng Fong ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; CHARGE COUPLED DEVICES; ELECTRIC RESISTANCE; EPILAYERS; FIELD EFFECT TRANSISTORS; GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; METALLIC COMPOUNDS; MOS DEVICES; NICKEL; NICKEL ALLOYS; PHASE INTERFACES; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SILICON ALLOYS;

CONCENTRATION OF; DEVICE PERFORMANCE; ELECTRIC DIPOLES; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; P TYPES; SCHOTTKY BARRIER HEIGHTS; SI (100) SUBSTRATES; SILICIDATION; SILICIDE PHASE; SILICON GERMANIUMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 61349095362     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3072677     Document Type: Article

References (22)

1. S. E. Thompson, R. S. Chau, T. Ghani, K. Mistry, S. Tyagi, and M. T. Bohr, IEEE Trans. Semicond. Manuf., 18, 26 (2005).
2. S.-D. Kim, S. Narasimha, and K. Rim, Tech. Dig.-Int. Electron Devices Meet., 2005, 149.
3. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, Tech. Dig.-Int. Electron Devices Meet., 2007, 247.
4. R. T. P. Lee, K.-M. Tian, A. E.-J. Lim, T.-Y. Liow, G. S. Samudra, D.-Z. Chi, and Y.-C. Yeo, IEEE Electron Device Lett., 29, 438 (2008).
5. SIA, International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA (2007).
6. A. Dixit, A. Kottantharayil, N. Collaert, M. Goodwin, M. Jurczak, and K. D. Meyer, IEEE Trans. Electron Devices, 52, 1132 (2005).
7. Q. T. Zhao, U. Breuer, E. Rije, St. Lenk, and S. Mantl, Appl. Phys. Lett., 86, 062108-1 (2005).
8. M. Tao, S. Agarwal, D. Udeshi, N. Basit, E. Maldonado, and W. P. Kirk, Appl. Phys. Lett., 83, 2593 (2003).
9. R. T. P. Lee, T.-Y. Liow, K.-M. Tan, A. E.-J. Lim, C.-S. Ho, K.-M. Hoe, M. Y. Lai, T. Osipowicz, G.-Q. Lo, G. Samudra, Proceedings of Symposium on VLSI Technology, p. 108, IEEE, Kyoto, (2007).
10. D. Connelly, C. Faulkner, P. A. Clifton, and D. E. Grupp, Appl. Phys. Lett., 88, 012105-1 (2006).
11. M. Sinha, E. F. Chor, and Y.-C Yeo, Appl. Phys. Lett., 92, 222114 (2008).
12. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley & Sons, Hoboken, NJ (1981).
13. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed., IEEE Press (2006).
14. E. Dubois and G. Larrieu, J. Appl. Phys., 96, 729 (2004).
15. J. Seger, T. Jarmar, Z.-B. Zhang, H. H. Radamson, F. Ericson, U. Smith, and S.-L. Zhang, J. Appl. Phys., 96, 1919 (2004).
16. J. H. Ko, C. H. Jang, S. H. Kim, Y.-J. Song, and N. E. Lee, J. Vac. Sci. Technol. A, 24, 1468 (2006).
17. T. Yamauchi, Y. Nishi, Y. Tsuchiya, A. Kinoshita, J. Koga, and K. Kato, Tech. Dig.-Int. Electron Devices Meet., 2007, 963.
18. M. Y. Ali and M. Tao, J. Appl. Phys., 101, 103708-1 (2007).
19. E. Bucher, S. Schulz, M. Ch. Lux-Steiner, P. Munz, U. Gubler, and F. Greuter, Appl. Phys. A: Solids Surf., 40, 71 (1986).
20. M. K. Niranjan, L. Kleinman, and A. A. Demkov, Phys. Rev. B, 75, 085326 (2007).
21. E. Kasper and K. Lyutovich, Properties of Silicon Germanium and SiGe: Carbon, INSPEC, IEE, UK (2000).
22. H. B. Zhao, K. L. Pey, W. K. Choi, S. Chattopadhyay, E. A. Fitzgerald, D. A. Antoniadis, and P. S. Lee, J. Appl. Phys., 92, 214 (2002).