Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 106-107

  Sinha, Mantavya ^a,b   Lee, Rinus T P ^a   Devi, Sivasubramaniam Nandini ^a   Lo, Guo Qiang ^b   Eng, Fong Chor ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT TECHNOLOGIES; FINFETS; INDEPENDENT CONTROL; ION IMPLANT; PROCESS CONDITION; WORKFUNCTION METALS;

ALUMINUM; CONTACT RESISTANCE; DYSPROSIUM; NICKEL; NICKEL ALLOYS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICIDES; SILICON ALLOYS; TECHNOLOGY;

DYSPROSIUM ALLOYS;

EID: 71049122386     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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6. M. Sinha et al., Appl. Phys. Lett., 92, 222114, 2008.