Kinetic Monte Carlo simulations of anisotropic Si(100) etching: Modeling the chemical origins of characteristic etch morphologies

Journal of Chemical Physics

Volumn 133, Issue 4, 2010, Pages

  Gupta, Ankush ^a   Aldinger, Brandon S ^a   Faggin, Marc F ^a   Hines, Melissa A ^a  

^a Cornell University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ORIGIN; DIHYDRIDES; ETCH MORPHOLOGY; ETCH RATES; GAS BUBBLE; KINETIC MONTE CARLO; KINETIC MONTE CARLO SIMULATION; LOCAL STRUCTURE; MASKING AGENTS; MICROFACETS; MONOHYDRIDES; MORPHOLOGICAL FEATURES; RAPID ETCHING; SI (1 1 1); SI(1 0 0); SI(100) SURFACE; SURFACE SILICON;

ANISOTROPY; COMPUTER SIMULATION; ETCHING; MONTE CARLO METHODS; MORPHOLOGY; SILICON;

CRYSTAL ATOMIC STRUCTURE;

EID: 77955698650     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3457159     Document Type: Article

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