Atomic-scale elucidation of the anisotropic etching of (110) n-Si in aqueous NH4F: Studies by in situ scanning tunneling microscopy

Journal of the Electrochemical Society

Volumn 143, Issue 12, 1996, Pages 4012-4019

  Ye, J H ^a   Kaji, K ^a   Itaya, K ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ANISOTROPY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DISSOLUTION; ELECTROCHEMISTRY; ETCHING; INTERFACES (MATERIALS); PITTING; SCANNING TUNNELING MICROSCOPY; SOLUTIONS; SURFACE ROUGHNESS;

ATOMIC RESOLUTION SCANNING TUNNELING MICROSCOPY; ELECTROCHEMICAL ETCHING; OPEN CIRCUIT POTENTIAL; ZIGZAG CHAINS;

SEMICONDUCTING SILICON;

EID: 0030388248     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837329     Document Type: Article

References (22)

1. Ultraclean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation, M. Liehr, M. Heyns, M. Hirose, and H. Parks, Editors, Mater. Res. Soc. Symp. Proc., Vol. 386, MRS, Pittsburgh, PA (1995).
2. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett., 56, 656 (1990).
3. P. Dumas, Y. J. Chabal, and P. Jakob, Surf. Sci., 269/270, 867 (1992).
4. P. Jakob and Y. J. Chabal, J. Chem. Phys., 95, 2897 (1991).
5. P. Jakob, Y. J. Chabal, K. Kuhnke, and S. B. Christman, Surf. Sci., 302, 49 (1994).
6. S. Watanabe, N. Nakayama, and T. Ito, Appl. Phys. Lett., 59, 1458 (1991).
7. R. S. Becker, G. S. Higashi, Y. J. Chabal, and A. J. Becker, Phys. Rev. Lett., 65, 1917 (1990).
8. G. S. Higashi, R. S. Becker, Y. J. Chabal, and A. J. Becker, Appl. Phys. Lett., 58, 1656 (1991).
9. H. E. Hessel, A. Feltz, M. Reiter, U. Memmert, and R. J. Behm, Chem. Phys. Lett., 186, 275 (1991).
10. U. Neuwald, H. E. Hessel, A. Feltz, U. Memmert, and R. J. Behm, Surf. Sci., 296, L8 (1993).
11. K. Itaya, R. Sugawara, Y. Morita, and H. Tokumoto, Appl. Phys. Lett., 60, 2534 (1992).
12. S.-L. Yau, K. Kaji, and K. Itaya, ibid., 66, 766 (1995).
13. K. Kaji, S.-L. Yau, and K. Itaya, J. Appl. Phys., 78, 5727 (1995).
14. P. Allongue, V. Kieling, and H. Gerischer, Electrochim. Acta, 40, 1353 (1995).
15. P. Allongue, V. Costa-Kieling, and H. Gerischer, This Journal, 140, 1009 and 1018 (1993).
16. P. Allongue, in Advances in Electrochemical Science and Engineering, Vol. 4, H. Gerischer and C. W. Tobias, Editors, p. 1, VCH, New York (1995).
17. S.-L. Yau, F.-R. F. Fan, and A. J. Bard, This Journal, 139, 2825 (1992).
18. H. Yao, S.-L. Yau, and K. Itaya, Surf. Sci., 335, 166 (1995).
19. H. Yao, S.-L. Yau, and K. Itaya, Appl. Phys. Lett., 68, 1473 (1996).
20. K. Uosaki, S. Ye, and N. Sekine, Bull Chem. Soc. Jpn., 69, 275 (1996).
21. O. J. Glembocki, R. E. Stahlbush, and M. Tomkiewicz, This Journal, 132, 145 (1985).
22. H. Gerischer and M. Lübke, Ber. Bunsenges. Phys. Chem., 91, 394 (1987).