Technology for the fabrication of ultrashort channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 19, Issue 4, 2001, Pages 1737-1741

  Knoch, J ^a   Appenzeller, J ^a   Lengeler, B ^a   Martel, R ^b   Solomon, P ^b   Avouris, Ph ^b   Dieker, Ch ^c   lu, Y ^d   Wang, K L ^d   Scholvin, J ^e   Del Alamo, J A ^e  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF KIEL   (Germany)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Si

Indexed keywords

EID: 0043057417     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.1351803     Document Type: Conference Paper

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