Atomic image of hydrogen-terminated Si(001) surfaces after wet cleaning and its first-principles study

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4065-4072

  Endo, Katsuyoshi ^a   Arima, Kenta ^a   Hirose, Kikuji ^a   Kataoka, Toshihiko ^a   Mori, Yuzo ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC ARRANGEMENT; DIHYDRIDES; DILUTE HF; ETCHING MECHANISM; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; LOCAL DENSITY OF STATE; SI(001) SURFACES; TOTAL ENERGY CALCULATION; ULTRA-PURE WATER; UNIT CELLS; WET CLEANING;

ATOMS; CALCULATIONS; CLEANING; HYDROGEN; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; SILICON;

CRYSTAL ATOMIC STRUCTURE;

EID: 0036536663     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448880     Document Type: Article

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