Mechanisms of etch hillock formation

Journal of Microelectromechanical Systems

Volumn 5, Issue 1, 1996, Pages 66-72

  Tan, Song Sheng ^b,d,e,f   Reed, Michael L ^{a,b,g,h,i,j,k}   Han, Hongtao ^a,c,j,l,m   Boudreau, Robert ^a,c,n,o,p  

^a IEEE

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c AMP Inc   (United States)

^d UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^e SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^f CARNEGIE MELLON UNIVERSITY   (United States)

^g RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^h STANFORD UNIVERSITY   (United States)

ⁱ HEWLETT PACKARD LABORATORIES   (United States)

^j Carnegie Mellon University ^*

^k PEKING UNIVERSITY   (China)

^l ACADEMIA SINICA   (Taiwan)

^m UNIVERSITY OF NEW HAMPSHIRE   (United States)

ⁿ SOUTHERN NEW HAMPSHIRE UNIVERSITY   (United States)

^o UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^p Optoelectronics Packaging Laboratory

more..

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CATHODES; CONCENTRATION (PROCESS); DEFECTS; ELECTRON MICROSCOPY; ETCHING; PHOTOLITHOGRAPHY; POTASSIUM COMPOUNDS; SEMICONDUCTOR DOPING;

ANISOTROPIC ETCHING; CATHODIC ETCHING; ETCH HILLOCK DEFECTS; POLYETHYLENE BLADES; TETRAMETHYL AMMONIUM HYDROXIDE;

SILICON WAFERS;

EID: 0030106490     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.485218     Document Type: Article

References (25)

1. M. R. Matthews, B. M. Macdonald, and K. R. Perston, "Optical components - The new challenge in packaging," IEEE Trans. on Components, Hybrids, and Manufacturing Technology, vol. 13, pp. 798-806, 1990.
2. R. Jebens, W. Trimmer, and J. Walker, "Micro actuators for aligning optical fibers," in Proc. Second IEEE Workshop on Micro Electro Mechanical Systems (MEMS-89), Salt Lake City, UT, 1989, pp. 35-39.
3. U. Schnakenberg, W. Benecke, and P. Lange, "TMAHW etchant for silicon micromachining," in Tech. Dig. Transducers 91, San Francisco, CA, 1991, pp. 815-818.
4. 4OH-based etchants for silicon micromachining," Sensors and Actuators, vol. A21-A23, pp. 1031-1035, 1990.
5. B. Block and M. Sierakowsky, "The use of a certain fluorocarbon surfactant and fluorocarbon conformal coating improves KOH silicon etching qualiy," in Micromachining and Micropackaging of Transducers, C. D. Fung, P. W. Cheung, W. H. Ko, and D. G. Fleming, Eds. Amsterdam: Elsevier, 1985, pp. 125-133.
6. M. M. Abu-Zeid, "Corner undercutting in anisotropically etched isolation contours," J. Electrochem. Soc., vol. 9, pp. 2138-2142, 1984.
7. K. E. Bean, "Anisotropic Etching of Silicon," IEEE Trans. Electron Dev., vol. ED-25, pp. 1185-1193, 1978.
8. H. L. Offereins, K. Kuhl, and H. Sandmaier, "Methods for the fabrication of convex corners in anisotropic etching of (100) silicon in aqueous KOH," Sensors and Actuators, vol. A25-27, pp. 9-13, 1991.
9. S. Tan, M. L. Reed, H. Han, and R. Boudreau, "Morphology of etch hillock defects created during anisotropic etching of silicon," J. Micromech. Microeng., vol. 4, pp. 147-155, 1994.
10. A. R. Patel and K. N. Goswami, "Some Micro-Disk Patterns on Topaz," in Proc. Phys. Soc., 1962, vol. 79, pp. 848-854.
11. 3-HF aqueous solutions," J. Crystal Growth, vol. 63, p. 285-291, 1983.
12. H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgärtel, "Anisotropic Etching of Crystalline Silicon in Alkaline Solutions," J. Electrochem. Soc., vol. 137, pp. 3612-3626, 1990.
13. M. J. Declercq, L. Gerzberg, and J. D. Meindl, "Optimization of the hydrazine-water solution for anisotropic etching of silicon in integrated circuit technology," J. Electrochem. Soc., vol. 122, pp. 545-552, 1975.
14. R. L. Smith, B. Kloeck, N. de Rooij, and S. D. Collins, "The potential dependence of silicon anisotropic etching in KOH at 60°C," J. Electroanal. Chem., vol. 238, pp. 103-113, 1987.
15. S. S. Wang, V. M. McNeil, and M. A. Schmidt, "An etch-stop utilizing selective etching of N-type silicon by pulsed potential anodization," J. Microelectromechanical Syst., vol. 1, pp. 187-192, 1992.
16. E. D. Palik, J. W. Faust, H. F. Gray, and R. F. Greene, "Study of the etch-stop mechanism in silicon," J. Electrochem. Soc., vol. 129, pp. 2051-2059, 1982.
17. H. F. Buckley, Crystal Growth. New York: Wiley, 1951, p. 319.
18. B. W. Batterman, "Hillocks, pits, and etch rate in germanium crystals," J. Appl. Phys., vol. 28, pp. 1236-1241, 1957.
19. T. K. Hirokawa, K. Honda, and T. Shibuya, "Formation of etch hillocks in white tin," J. Cryst. Growth, vol. 24/25, pp. 484-487, 1974.
20. K. Sangwal and S. K. Arora, "Etching of MgO crystals in acids: Kinetics and mechanism of dissolution," J. Mater. Sci., vol. 13, pp. 1977-1985, 1978.
21. D. L. Kendall and G. R. de Guel, "Orientations of the third kind: The coming of age of (110) silicon," in Micromachining and Micropackaging of Transducers, C. D. Fung, P. W. Cheung, W. H. Ko, and D. G. Fleming, Eds. Amsterdam: Elsevier, 1985, pp. 107-124.
22. W. Eitel, Silicate Science IV. New York, London: Academic, 1966, p. 383.
23. F. Hirose, M. Suemitsu, and N. Miyamoto, "Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy," Jpn. J. Appl. Phys. 2, Lett., vol. 29, no. 10, pp. L1881-L1883, 1990.
24. F. C. Eversteyn, "Chemical-reaction engineering in the semiconductor industry," Philips Res. Rep., vol. 29, pp. 45-66, 1974.
25. Y. K. Bhatnagar and A. Nathan, "On pyramidal protrusions in anisotropic etching of (100) silicon," Sensors and Actuators, vol. A36, pp. 233-240, 1993.