Aqueous etching produces Si(100) surfaces of near-atomic flatness: Strain minimization does not predict surface morphology

Journal of Physical Chemistry C

Volumn 114, Issue 1, 2010, Pages 423-428

  Clark, Ian T ^a   Aldinger, Brandon S ^a   Gupta, Ankush ^a   Hines, Melissa A ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FLATNESS; CARTESIAN COMPONENTS; DIHYDRIDES; ETCH MORPHOLOGY; ETCHED SURFACE; H-TERMINATED SURFACE; INFRARED SPECTRUM; ROOM TEMPERATURE; SI(1 0 0); SI(100) SURFACE;

ABSORPTION SPECTROSCOPY; ETCHING; INFRARED SPECTROSCOPY; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; SURFACE ROUGHNESS;

SURFACE MORPHOLOGY;

EID: 75149138771     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp908527e     Document Type: Article

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