Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning

Applied Physics Letters

Volumn 85, Issue 25, 2004, Pages 6254-6256

  Arima, Kenta ^a   Katoh, Jun ^a   Endo, Katsuyoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL CLEANING; ELECTROCHEMISTRY; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON WAFERS;

ATOMIC-SCALE ANALYSIS; NANOMETERS; SILICON SURFACES; WET CLEANING;

SURFACE TREATMENT;

EID: 20444503937     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1840108     Document Type: Article

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