Ni/Si-based ohmic contacts to p- and n-type GaN

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 1077-1082

  Kaminska, E ^a   Piotrowska, A ^a   Barcz, A ^a   Guziewicz, M ^a   Kasjaniuk, S ^a   Bremser, M D ^a   Davis, R F ^a   Dynowska, E ^a   Kwiatkowski, S ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; NICKEL; NITRIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR METAL BOUNDARIES; SILICON; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

OHMIC CONTACTS;

EID: 0031365602     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-1077     Document Type: Conference Paper

References (16)