Investigation of NiOx-based contacts on p-GaN

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 8-9, 2008, Pages 855-862

  Liday, J ^a   Hotový, Ivan ^a   Sitter, H ^b   Vogrincic P ^a   Vincze, A ^c   Vavra I ^d   Satka A ^a   Ecke, G ^e   Bonanni, A ^b   Breza, J ^a   Simbrunner, C ^b   Plochberger, B ^b  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c INTERNATIONAL LASER CENTER   (Slovakia)

^d INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^e ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONTACT RESISTANCE; ELECTRIC PROPERTIES; GALLIUM NITRIDE; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; METALLIZING; OHMIC CONTACTS;

CIRCULAR TRANSMISSION LINE METHOD (CTLM); CONTACT STRUCTURE;

NICKEL OXIDE;

EID: 44149088629     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9520-1     Document Type: Conference Paper

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