Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN

Journal of Materials Research

Volumn 12, Issue 9, 1997, Pages 2249-2254

  Smith, L L ^a,d   Davis, R F ^a   Kim, M J ^b   Carpenter, R W ^b   Huang, Y ^c  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON MICROSCOPY; GOLD; HIGH TEMPERATURE EFFECTS; MAGNESIUM; MICROSTRUCTURE; MULTILAYERS; NITRIDES; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

GALLIUM NITRIDES; HIGH RESOLUTION ELECTRON MICROSCOPY (HREM); RAPID THERMAL ANNEALING;

OHMIC CONTACTS;

EID: 0031235763     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0300     Document Type: Article

References (22)

1. T. C. Shen, G. B. Gao, and H. Morkoç, J. Vac. Sci. Technol. B 10 (5), 2113 (1992).
2. R. Williams, Modern GaAs Processing Techniques (Artech House, Norwood, MA, 1990).
3. V. L. Rideout, Solid State Electron. 18, 541 (1975).
4. E. D. Marshall and M. Murakami, in Contacts to Semiconductors, edited by L. J. Brillson (Noyes Publications, Park Ridge, NJ, 1993).
5. G. Stareev, Appl. Phys. Lett. 62 (22), 2801 (1993).
6. F. W. Ragay, M. R. Leys, and J. H. Woher. Appl. Phys. Lett. 63 (9), 1234 (1993).
7. H. K. Henisch, Semiconductor Contacts (Clarendon Press, Oxford, 1984).
8. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Oxford University Press, New York, 1988).
9. S. Kurtin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 22 (26), 1433 (1969).
10. M. Wittmer and J. L. Freeouf, Phys. Lett. A 173 (2), 190 (1993).
11. L. L. Smith and R. F. Davis, in Properties of Group III Nitrides, EMIS DataReview Series No. 11, edited by J. H. Edgar (INSPEC, Institution of Electrical Engineers, London, 1994).
12. J. S. Foresi, Ohmic Contacts and Schottky Barriers on GaN, M.S. Thesis, Boston University (1992).
13. J. S. Foresi and T. D. Moustakas, Appl. Phys. Lett. 62 (22), 2859 (1993).
14. P. Hacke, T. Detchprohm, K. Hiramatsu, and N. Sawaki, Appl. Phys. Lett. 63 (19), 2676 (1993).
15. M. R. H. Khan, T. Detchprohm, P. Hacke, K. Hiramatsu, and N. Sawaki, J. Phys. D 28, 1169 (1995).
16. S. C. Binari, H. B. Dietrich, and G. Keiner, Electron. Lett. 30 (11), 909 (1994).
17. C. Wang, K. S. Ailey, K. L. More, and R. F. Davis, Inst. Phys. Conf. Ser. No. 137, 417 (1994).
18. L. L. Smith, S. W. King, R. Nemanich, and R. F. Davis, J. Electron. Mater. 25 (5), 805 (1996).
19. G. K. Reeves and H. B. Harrison, IEEE Electron Device Lett. EDL-3, 111 (1982).
20. D. Korn, H. Pfeifle, and G. Zibold, Z. Physik 270, 195 (1974).
21. R. J. Nemanich, M. C. Benjamin, S. W. King, M. D. Bremser, R. F. Davis, B. Chen, Z. Zhang, and J. Bernholc, in Gallium Nitride and Related Materials, edited by R. D. Dupuis, J. A. Edmond, F. A. Ponce, and S. Nakamura (Mater. Res. Soc. Symp. Proc. 395, Pittsburgh, PA, 1996).
22. P. A. Barnes, X-J. Zhang, M. L. Lovejoy, T. J. Drummond, H. P. Hjalmarson, M. Crawford, R. J. Shul, and J. C. Zolper, in Gallium Nitride and Related Materials, edited by R. D. Dupuis, J. A. Edmond, F. A. Ponce, and S. Nakamura (Mater. Res. Soc. Symp. Proc. 395, Pittsburgh, PA, 1996).