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Volumn 42, Issue 9, 2010, Pages 2358-2363

Fabrication of Si nanocrystals in an amorphous SiC matrix by magnetron sputtering

Author keywords

Nanocrystals; Si; SiC; Third generation solar cells

Indexed keywords

ANNEALING TEMPERATURES; DC POWER; ELECTRONIC DEVICE; EXCESS SI; HIGH-TEMPERATURE ANNEALING; MATRIX; MEAN SIZE; NANOCRYSTAL FORMATION; PROCESS PARAMETERS; RF-MAGNETRON SPUTTERING; SI; SI CONTENT; SI NANOCRYSTAL; SI-SI BONDS; SIC; SIC FILMS; TEM; THEORETICAL LIMITS; THIRD GENERATION; WIDE BAND-GAP MATERIAL; XPS;

EID: 77955307849     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.05.013     Document Type: Article
Times cited : (31)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.