Silicon quantum dots in a dielectric matrix for all-silicon tandem solar cells

Advances in OptoElectronics

Volumn 2007, Issue , 2007, Pages

  Cho, Eun Chel ^a   Green, Martin A ^a   Conibeer, Gavin ^a   Song, Dengyuan ^a   Cho, Young Hyun ^a   Scardera, Giuseppe ^a   Huang, Shujuan ^a   Park, Sangwook ^a   Hao, X J ^a   Huang, Yidan ^a   Van Dao, Lap ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b SWINBURNE UNIVERSITY OF TECHNOLOGY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34548561937     PISSN: 1687563X     EISSN: 16875648     Source Type: Journal    
DOI: 10.1155/2007/69578     Document Type: Article

References (47)

1. M. A. Green Third Generation Photovoltaics: Advanced Solar Energy Conversion. Springer Berlin, Germany 2003
2. J. Nelson The Physics of Solar Cells. Imperial College Press London, UK 2003
3. W. E. McMahon S. Kurtz K. Emery M. S. Young Criteria for the design of GaInP/GaAs/Ge triple-junction cells to optimize their performance outdoors. Proceedings of the 29th IEEE Photovoltaic Specialists Conference New Orleans, La, USA 2002 931 934
4. A. V. Shah J. Bailat E. Vallat-Sauvain Microcrystalline and "micromorph" solar cells and modules: status and potential. Proceedings of the 31st IEEE Photovoltaic Specialists Conference Lake Buena Vista, Fla, USA 2005 1353 1358
5. M. A. Green E.-C. Cho Y. Cho All-silicon tandem cells based on "artificial" semiconductor synthesised using silicon quantum dots in a dielectric matrix. Proceedings of the 20th European Photovoltaic Solar Energy Conference and Exhibition Barcelona, Spain 2005 3
6. G. Conibeer g.conibeer@unsw.edu.au M. A. Green R. Corkish Silicon nanostructures for third generation photovoltaic solar cells. Thin Solid Films 511-512 2006 654 662
7. F. Meillaud fanny.meillaud@unine.ch A. Shah C. Droz E. Vallat-Sauvain C. Miazza Efficiency limits for single-junction and tandem solar cells. Solar Energy Materials and Solar Cells 90 18-19 2006 2952 2959
8. E.-C. Cho eccho@unsw.edu.au M. A. Green J. Xia R. Corkish P. Reece M. Gal Clear quantum-confined luminescence from crystalline silicon/ SiO 2 single quantum wells. Applied Physics Letters 84 13 2004 2286 2288
9. W. van Roosbroeck W. Shockley Photon-radiative recombination of electrons and holes in germanium. Physical Review 94 1954 6 1558 1560
10. M. A. Green G. Conibeer D. König Progress with all-silicon tandem cells based on silicon quantum dots in a dielectric matrix. Proceedings of the 21th European Photovoltaic Solar Energy Conference Dresden, Germany 2006
11. S. Zafar K. A. Conrad Q. Liu Thickness and effective electron mass measurements for thin silicon dioxide films using tunneling current oscillations. Applied Physics Letters 67 1995 7 1031 1033
12. P. C. Arnett D. J. DiMaria Contact currents in silicon nitride. Journal of Applied Physics 47 5 1976 2092 2097
13. C. Persson U. Lindefelt Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap. Physical Review B 54 15 1996 10257 10260
14. C.-W. Jiang c.jiang@unsw.edu.au M. A. Green Silicon quantum dot superlattices: modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications. Journal of Applied Physics 99 11 2006 114902 7 pages
15. L. L. Chang L. Esaki W. E. Howard R. Ludeke The growth of a GaAs-GaAlAs superlattice. Journal of Vacuum Science and Technology 10 1973 1 11 16
16. B. Abeles T. Tiedje Amorphous semiconductor superlattices. Physical Review Letters 51 1983 21 2003 2006
17. Z. H. Lu D. J. Lockwood J.-M. Baribeau Quantum confinement and light emission in SiO 2/Si superlattices. Nature 378 6553 1995 258 260
18. H. Morisaki H. Hashimoto F. W. Ping H. Nozawa H. Ono Strong blue light emission from an oxygen-containing Si fine structure. Journal of Applied Physics 74 1993 4 2977 2979
19. K. A. Littau P. J. Szajowski A. J. Muller A. R. Kortan L. E. Brus A luminescent silicon nanocrystal colloid via a high-temperature aerosol reaction. Journal of Physical Chemistry 97 6 1993 1224 1230
20. Y. Maeda N. Tsukamoto Y. Yazawa Y. Kanemitsu Y. Masumoto Visible photoluminescence of Ge microcrystals embedded in SiO 2 glassy matrices. Applied Physics Letters 59 1991 24 3168 3170
21. M. Zacharias J. Heitmann R. Scholz U. Kahler M. Schmidt J. Bläsing Size-controlled highly luminescent silicon nanocrystals: a SiO/ SiO 2 superlattice approach. Applied Physics Letters 80 4 2002 661 663
22. L. Tsybeskov K. D. Hirschman S. P. Duttagupta Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization. Physica Status Solidi A 165 1 1998 69 77
23. T. Shimizu-Iwayama S. Nakao K. Saitoh Visible photoluminescence in Si + -implanted thermal oxide films on crystalline Si. Applied Physics Letters 65 14 1994 1814 1816
24. L. Patrone patrone@gpec.univ-mrs.fr D. Nelson V. Safarov M. Sentis W. Marine Size dependent photoluminescence from Si nanoclusters produced by laser ablation. Journal of Luminescence 80 1-4 1998 217 221
25. R. A. Bley S. M. Kauzlarich A low-temperature solution phase route for the synthesis of silicon nanoclusters. Journal of the American Chemical Society 118 49 1996 12461 12462
26. C. Lam Y. F. Zhang Y. H. Tang C. S. Lee I. Bello S. T. Lee apannale@cityu.edu.hk Large-scale synthesis of ultrafine Si nanoparticles by ball milling. Journal of Crystal Growth 220 4 2000 466 470
27. O. Akcakir J. Therrien G. Belomoin Detection of luminescent single ultrasmall silicon nanoparticles using fluctuation correlation spectroscopy. Applied Physics Letters 76 14 2000 1857 1859
28. E.-C. Cho Y.-H. Cho T. Trupke R. Corkish G. Conibeer M. A. Green Silicon nanostructures for all-silicon tandem solar cells. Proceedings of the 19th European Photovoltaic Solar Energy Conference and Exhibition Paris, France 2004 235
29. N.-M. Park T.-S. Kim S.-J. Park sjpark@kjist.ac.kr Band gap engineering of amorphous silicon quantum dots for light-emitting diodes. Applied Physics Letters 78 17 2001 2575 2577
30. S. Lombardo S. U. Campisano Electrical and optical properties of semi-insulating polycrystalline silicon thin films: the role of microstructure and doping. Materials Science and Engineering 17 8 1996 281 336
31. Y. Cho E.-C. Cho Y. Huang T. Trupke G. Conibeer M. A. Green Silicon quantum dots in SiNx matrix for third generation photovoltaics. Proceedings of the 20th European Photovoltaic Solar Energy Conference and Exhibition Barcelona, Spain 47 2005
32. Y. Kurokawa S. Miyajima A. Yamada M. Konagai Preparation of nanocrystalline silicon in amorphous silicon carbide matrix. Japanese Journal of Applied Physics 45 2006 40 L1064 L1066
33. D. Song E.-C. Cho Y.-H. Cho (In press)Thin Solid Films Evolution of Si (and SiC) nanocrystal precipitation in SiC matrix.
34. J. Y. Fan X. L. Wu hkxlwu@nju.edu.cn P. K. Chu paul.chu@cityu.edu.hk Low-dimensional SiC nanostructures: fabrication, luminescence, and electrical properties. Progress in Materials Science 51 8 2006 983 1031
35. J. Zi jianzi@fudan.ihep.ac.cn H. Büscher C. Falter W. Ludwig K. Zhang X. Xie Raman shifts in Si nanocrystals. Applied Physics Letters 69 2 1996 200 202
36. D. Kovalev H. Heckler M. Ben-Chorin G. Polisski M. Schwartzkopff F. Koch Breakdown of the k-conservation rule in Si nanocrystals. Physical Review Letters 81 13 1998 2803 2806
37. Y. Kanemitsu Light-emitting silicon materials. Journal of Luminescence 70 1-6 1996 333 342
38. H. Takagi H. Ogawa Y. Yamazaki A. Ishizaki T. Nakagiri Quantum size effects on photoluminescence in ultrafine Si particles. Applied Physics Letters 56 1990 24 2379 2380
39. S. Takeoka M. Fujii S. Hayashi Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime. Physical Review B 62 24 2000 16820 16825
40. T.-Y. Kim N.-M. Park K.-H. Kim Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films. Applied Physics Letters 85 22 2004 5355 5357
41. T.-W. Kim C.-H. Cho B.-H. Kim S.-J. Park sjpark@gist.ac.kr Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH 4 and NH 3. Applied Physics Letters 88 12 2006 123102 3 pages
42. A. Puzder A. J. Williamson J. C. Grossman G. Galli Surface control of optical properties in silicon nanoclusters. Journal of Chemical Physics 117 14 2002 6721 6729
43. M.-S. Yang K.-S. Cho J.-H. Jhe Effect of nitride passivation on the visible photoluminescence from Si-nanocrystals. Applied Physics Letters 85 16 2004 3408 3410
44. L. Van Dao dvlap@swin.edu.au X. Wen M. T. T. Do Time-resolved and time-integrated photoluminescence analysis of state filling and quantum confinement of silicon quantum dots. Journal of Applied Physics 97 1 2005 013501 5 pages
45. M. Dovrat Y. Goshen J. Jedrzejewski I. Balberg A. Sa'ar saar@vms.huji.ac.il Radiative versus nonradiative decay processes in silicon nanocrystals probed by time-resolved photoluminescence spectroscopy. Physical Review B 69 15 2004 155311 8 pages
46. S. Ossicini ossicini@unimore.it F. Iori iori.federico@unimore.it E. Degoli degoli@unimore.it Understanding doping in silicon nanostructures. IEEE Journal on Selected Topics in Quantum Electronics 12 6 2006 1585 1590
47. G. Polisski gpolissk@physik.tu-muenchen.de D. Kovalev G. Dollinger T. Sulima F. Koch Boron in mesoporous Si - where have all the carriers gone? Physica B 273-274 1999 951 954