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Volumn 335, Issue 1-2, 1998, Pages 249-252

Effects of high-temperature annealing on the structure of reactive sputtering a-SiC:H films

Author keywords

Amorphous materials; Annealing; Crystallization

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTALLIZATION; FILM PREPARATION; HYDROGENATION; MOLECULAR STRUCTURE; RAMAN SCATTERING; SILICON CARBIDE; SPUTTERING; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

EID: 0348198655     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00566-5     Document Type: Article
Times cited : (12)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.