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Volumn 335, Issue 1-2, 1998, Pages 249-252
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Effects of high-temperature annealing on the structure of reactive sputtering a-SiC:H films
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Author keywords
Amorphous materials; Annealing; Crystallization
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Indexed keywords
ANNEALING;
CHEMICAL BONDS;
CRYSTALLIZATION;
FILM PREPARATION;
HYDROGENATION;
MOLECULAR STRUCTURE;
RAMAN SCATTERING;
SILICON CARBIDE;
SPUTTERING;
THERMAL EFFECTS;
X RAY CRYSTALLOGRAPHY;
REACTIVE SPUTTERING;
AMORPHOUS FILMS;
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EID: 0348198655
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)00566-5 Document Type: Article |
Times cited : (12)
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References (15)
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