Phase separation in SiGe nanocrystals embedded in SiO2 matrix during high temperature annealing

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Mogaddam, N A P ^a   Alagoz, A S ^a,c   Yerci, S ^a,d   Turan, R ^a   Foss, S ^b   Finstad, T G ^b  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b UNIVERSITY OF OSLO   (Norway)

^c University of Arkansas at Little Rock   (United States)

^d Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; GERMANIUM; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; PHASE MODULATION; PHASE SEPARATION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; REAL TIME SYSTEMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEPARATION; SILICON; SILICON ALLOYS; SILICON COMPOUNDS; SIZE SEPARATION; SURFACE CHEMISTRY; SURFACE DIFFUSION; SURFACE TENSION; SYSTEMS ENGINEERING; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

ANNEALING TIMES; ATOMIC SIZES; COMPOSITIONAL PROPERTIES; COMPOSITIONAL UNIFORMITIES; COSPUTTERING; DOUBLE PEAKS; EXPERIMENTAL OBSERVATIONS; GE ATOMS; HIGH TEMPERATURES; LONG TIMES; RAMAN SPECTRUMS; SEGREGATION PROCESSES; SI ATOMS; SI SUBSTRATES; SIGE NANOCRYSTALS; SIMULATION METHODS; SPECTROSCOPY MEASUREMENTS; SURFACE ENERGIES; X-RAY DIFFRACTIONS;

CRYSTAL ATOMIC STRUCTURE;

EID: 58149214357     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3048543     Document Type: Article

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