Annealing effects of highly homogeneous a-Si1-xCx:H

Journal of Non-Crystalline Solids

Volumn 330, Issue 1-3, 2003, Pages 196-215

  Prado, R J ^a   D'Addio, T F ^a   Fantini, M C A ^a   Pereyra, I ^a   Flank, A M ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b SYNCHROTRON SOLEIL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTALLIZATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS; X RAY DIFFRACTION;

CARBON LOSS;

SILICON CARBIDE;

EID: 0242365612     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(03)00526-X     Document Type: Article

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