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Volumn 89, Issue 3, 2006, Pages

Effects of oxide layer thickness on Si-nanocrystal photoluminescence intensity in Si+-implanted SiO2/Si systems

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; LASER BEAMS; LIGHT EMISSION; LIGHT MODULATION; PHOTOLUMINESCENCE; SILICON COMPOUNDS; SPECTRUM ANALYSIS;

EID: 33746317035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234739     Document Type: Article
Times cited : (15)

References (18)
  • 13
    • 0042284411 scopus 로고    scopus 로고
    • Wiley Encyclopedia of Electrical and Electronics Engineering, edited by J. G. Webster (Wiley, New York)
    • J. A. Woollam, in Variable Angle Spectroscopic Ellipsometry, Wiley Encyclopedia of Electrical and Electronics Engineering, edited by J. G. Webster (Wiley, New York, 2000).
    • (2000) Variable Angle Spectroscopic Ellipsometry
    • Woollam, J.A.1
  • 15
    • 0004093211 scopus 로고    scopus 로고
    • edited by R. W. Collins, D. E. Apsnes, and E. A. Irenes (Elsevier Science S. A., Lausanne)
    • Spectroscopic Ellipsometry, edited by R. W. Collins, D. E. Apsnes, and E. A. Irenes (Elsevier Science S. A., Lausanne, 1998).
    • (1998) Spectroscopic Ellipsometry


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.