Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 3007-3010

  Forsberg, Urban ^a   Lundskog, A ^a   Kakanakova Georgieva, A ^a   Ciechonski, R ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. High electron mobility transistors

Indexed keywords

A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B3. HIGH ELECTRON MOBILITY TRANSISTORS; EPILAYER THICKNESS; GROWTH CHAMBER; LOW TEMPERATURE GRADIENTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD GROWTH; NON-UNIFORMITIES; ROOM TEMPERATURE; SEMI-INSULATING; SIC SUBSTRATES;

CRACKING (CHEMICAL); ELECTRIC RESISTANCE; ELECTRON MOBILITY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SHEET RESISTANCE; SILICON CARBIDE; SUBSTRATES; VAPORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 65949097953     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.045     Document Type: Article

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