Influence of the polarization on interfacial properties in Al/SiO 2/GaN/Al0.4Ga0.6N/GaN heterojunction metal-insulator-semiconductor structures

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4702-4704

  Chen, P ^a   Chua, S J ^a   Wang, W D ^a   Chi, D Z ^a   Miao, Z L ^a   Zheng, Y D ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS;

GATE VOLTAGES;

METAL INSULATOR BOUNDARIES;

EID: 0142089262     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1599046     Document Type: Article

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