Analysis of thin AlN carrier exclusion layers in AlGaN/GaN microwave heterojunction field-effect transistors

Semiconductor Science and Technology

Volumn 19, Issue 6, 2004, Pages

  Balmer, R S ^a   Hilton, K P ^a   Nash, K J ^a   Uren, M J ^a   Wallis, D J ^a   Lee, D ^a   Wells, A ^b   Missous, M ^b   Martin, T ^a  

^a QINETIQ   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CARRIER CONCENTRATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; HETEROJUNCTIONS; HOLE MOBILITY; PRESSURE EFFECTS; VAPOR PHASE EPITAXY;

CARRIER EXCLUSION LAYERS; CONDUCTIVITY MEASUREMENTS; DRIFT MOBILITY; ROOM TEMPERATURE;

FIELD EFFECT TRANSISTORS;

EID: 2942534094     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/6/L02     Document Type: Article

References (13)

1. Wu Y F, Kapolnek D, Ibbetson J P, Parikh P, Keller B P and Mishra U K 2001 IEEE Trans. Electron Devices 48 586
2. Li T, Joshi R P and del Rosario R D 2002 IEEE Trans. Electron Devices 49 1511
3. Hsu L and Walukiewicz W 2001 J. Appl. Phys. 89 1783
4. Smorchkova I P, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars S P, Speck J S and Mishra U K 2001 J. Appl. Phys. 90 5196
5. Shen L, Heikman S, Moran B, Coffie R, Zhang N Q, Buttari D, Smorchkova I P, Keller S, DenBaars S P and Mishra U K 2001 IEEE Electron Device Lett. 22 457
6. Wong M M, Chowdhury U, Sicault D, Becher D T, Denyszyn J C, Zhu T G, Feng M and Dupuis R D 2002 Electron. Lett. 38 428
7. Balmer R S, Pickering C, Pidduck A J and Martin T 2002 J. Crys. Growth 245 198
8. Balmer R S, Hilton K P, Nash K, Uren M J, Wallis D J, Wells A, Missous M and Martin T 2003 Phys. Status Solidi c 0 2331
9. Uren M J, Martin T, Hughes B T, Hilton K P, Wells A, Balmer R S and Herbert D C 2002 Phys. Status Solidi a 194 468
10. Uren M J, Herbert D, Martin T, Hughes B T, Birbeck J C, Balmer R, Pidduck A J and Jones S K 2001 Phys. Status Solidi a 188 195
11. Ambacher O, Majewski J, Miskys C, Link A, Hermann M, Eickhoff M, Stutzmann M, Bernardini F, Fiorentini V, Tilak V, Schaff B and Eastman L F 2002 J. Phys.-Condens. Matter 14 3399
12. Keller S, Heikman S, Shen L, Smorchkova I P, DenBaars S P and Mishra U K 2002 Appl. Phys. Lett. 80 4387
13. Bastard G and Davies J H 1988 Wave Mechanisms Applied to Semiconductor Heterostructures (New York: Halsted)