Reducing stress in silicon carbide epitaxial layers

Journal of Crystal Growth

Volumn 252, Issue 1-3, 2003, Pages 289-296

  Danielsson, O ^a   Hallin, C ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Computer simulation; A3. Chemical vapor deposition; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; FLUID DYNAMICS; STRESS ANALYSIS; SUBSTRATES;

EPITAXIAL LAYERS;

SILICON CARBIDE;

EID: 0037401478     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)00938-2     Document Type: Article

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