Unusual growth behavior of atomic layer deposited pbtio3 thin films using water and ozone as oxygen sources and their combination

Journal of Physical Chemistry C

Volumn 114, Issue 29, 2010, Pages 12736-12741

  Lee, Hyun Ju ^a   Park, Min Hyuk ^a   Min, Yo Sep ^b   Clavel, Guylhaine ^c   Pinna, Nicola ^c,d   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b Konkuk University   (South Korea)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALKOXY SPECIES; ATOMIC LAYER DEPOSITED; CONCENTRATION RATIO; GROWTH BEHAVIOR; GROWTH PER CYCLE; ISO-PROPOXIDE; OXYGEN SOURCES; REACTION MECHANISM; SUB-CYCLE; SUBSTRATE TEMPERATURE; SURFACE FORMATE SPECIES; TI PRECURSOR; TIO;

ATOMIC LAYER DEPOSITION; DEPOSITION; LEAD; LEAD OXIDE; OZONE; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; TITANIUM;

FILM GROWTH;

EID: 77954934297     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp101423f     Document Type: Article

References (29)

1. Suntola, T. Mater. Sci. Rep. 1989, 4, 261
2. Scott, J. F. Ferroelectric Memories; Springer: Heidelberg, Germany, 2000.
3. Harjuoja, J.; Kosola, A.; Putkonen, M.; Niinisto, L. Thin Solid Films 2006, 496, 346
4. Hwang, G. W.; Lee, H. J.; Lee, K.; Hwang, C. S. J. Electrochem. Soc. 2007, 154, G69
5. Watanabe, T.; Hoffmann-Eifert, S.; Mi, S.; Jia, C.; Waser, R.; Hwang, C. S. J. Appl. Phys. 2007, 101, 014114
6. Watanabe, T.; Hoffmann-Eifert, S.; Peter, F.; Mi, S.; Jia, C.; Hwang, C. S.; Waser, R. J. Electrochem. Soc. 2007, 154, G262
7. Watanabe, T.; Hoffmann-Eifert, S.; Hwang, C. S.; Waser, R. J. Electrochem. Soc. 2007, 155, D715
8. Cho, M.; Jeong, D. S.; Park, J.; Park, H. B.; Lee, S. W.; Park, T. J.; Hwang, C. S. Appl. Phys. Lett. 2004, 85, 5953
9. Cho, M.; Park, H. B.; Park, J.; Lee, S. W.; Hwang, C. S.; Jeong, J.; Kang, H. S.; Kim, Y. W. J. Electrochem. Soc. 2005, 152, F49
10. Rahtu, A.; Alaranta, T.; Ritala, M. Langmuir 2001, 17, 6506
11. Kang, S. Y.; Hwang, C. S.; Kim, H. J. J. Electrochem. Soc. 2005, 152, C15
12. Kawano, K.; Nagai, A.; Kosuge, H.; Shibutami, T.; Oshima, N.; Funakubo, H. Electrochem. Solid-State Lett. 2006, 9, C107
13. Kim, S. K.; Lee, S. Y.; Lee, S. W.; Hwang, G. W.; Hwang, C. S.; Lee, J. W.; Jeong, J. J. Electrochem. Soc. 2007, 154, D95
14. Han, J. H.; Lee, S. W.; Choi, G.-J.; Lee, S. Y.; Hwang, C. S.; Dussarrat, C.; Gatineau, J. Chem. Mater. 2009, 21, 207
15. Kim, W. D.; Hwang, W. D.; Kwon, O. S.; Kim, S. K.; Cho, M.; Jeong, D. S.; Lee, S. W.; Seo, M. H.; Hwang, C. S.; Min, Y. S.; Cho, Y. J. J. Electrochem. Soc. 2005, 152, C552
16. Kim, S. K.; Lee, S. Y.; Seo, M.; Choi, G.-J.; Hwang, C. S. J. Appl. Phys. 2007, 102, 024109
17. Goldstein, D. N.; McCormick, J. A.; George, S. M. J. Phys. Chem. C 2008, 112, 19530
18. Rai, V. R.; Agarwal, S. J. Phys. Chem. C 2008, 112, 9552
19. Lee, H. J.; Park, M. H.; Hwang, C. S. ECS Trans. 2009, 19, 829
20. Puurunen, R. L. J. Appl. Phys. 2005, 97, 121301
21. Barin, I. Thermochemical Data of Pure Substances; VCH: Weinhein, Germany, 1989.
22. Kwon, O. S.; Lee, S. W.; Han, J. H.; Hwang, C. S. J. Electrochem. Soc. 2007, 154, G127
23. Yang, T. S.; Cho, W.; Kim, M.; Ahn, K.-S.; Chung, T.-M.; Kim, C. G.; Kim, Y. J. Vac. Sci. Technol., A 2005, 23, 1238
24. Kwon, J.; Dai, M.; Halls, M. D.; Chabal, Y. J. Chem. Mater. 2008, 20, 3248
25. Caruso, J.; Hampden-Smith, M. J. J. Sol-Gel Sci. Technol. 1997, 8, 35
26. Rauwel, E.; Clavel, G.; Willinger, M.-G.; Rauwel, P.; Pinna, N. Angew. Chem., Int. Ed. 2008, 47, 3592
27. Clavel, G.; Rauwel, E.; Willinger, M.-G.; Pinna, N. J. Mater. Chem. 2009, 19, 454
28. Hubert-Pfalzgraf, L. G.; Daniele, S.; Papiernik, R.; Massiani, M.-C.; Septe, B.; Vaissermann, J.; Daran, J.-C. J. Mater. Chem. 1997, 7, 753
29. Schwartz, R. W. Chem. Mater. 1997, 9, 2325