Comparison of properties of an Al2O3 thin layers grown with remote O2 plasma, H2O, or O3 as oxidants in an ALD process for HfO2 gate dielectrics

Journal of the Electrochemical Society

Volumn 152, Issue 5, 2005, Pages

  Cho, Moonju ^a   Park, Hong Bae ^a   Park, Jaehoo ^a   Lee, Suk Woo ^a   Hwang, Cheol Seong ^a   Jeong, Jaehack ^b   Kang, Hee Sung ^c   Kim, Young Wook ^c  

^a Seoul National University   (South Korea)

^b Ever tek Co   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CURRENT DENSITY; DIELECTRIC MATERIALS; FILM GROWTH; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDATION; OXYGEN; PLASMA APPLICATIONS;

GATE DIELECTRICS; OXIDANTS; OXIDATION POWER; THIN LAYERS;

THIN FILMS;

EID: 20344364392     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1884130     Document Type: Article

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