Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 8 PART A, 1996, Pages

  Hao, Maosheng ^a   Shao, Chunlin ^a   Soga, Tetsuo ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a   Liang, Junwu ^b   Zheng, Lianxi ^b   Xiao, Zhibo ^b   Xiao, Jianfei ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

a Si buffer layer; Deep level; GaAs Si epilayer; MOCVD

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SPECTROSCOPY; ULTRATHIN FILMS;

BUFFER LAYERS; CONDUCTION BAND; ELECTRON TRAPS; METASTABLE DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030213013     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l960     Document Type: Article

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