MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2

IEEE Electron Device Letters

Volumn 25, Issue 9, 2004, Pages 619-621

  Park, Chang Seo ^a   Cho, Byung Jin ^a   Kwong, Dim Lee ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRIC; HIGH TEMPERATURE ANNEALING; INTERFACIAL LAYER GROWTH;

MOS CAPACITORS;

EID: 4444361667     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.834246     Document Type: Article

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