MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer

Crystal Research and Technology

Volumn 41, Issue 2, 2006, Pages 111-116

  Scholz, S ^a,c   Bauer, J ^a   Leibiger, G ^a   Herrnberger, H ^b   Hirsch, D ^b   Gottschalch, V ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Gaas on ge; Low temperature buffer layer; MOVPE

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES; X RAY DIFFRACTION;

GAAS ON GE; LOW TEMPERATURE BUFFER LAYERS;

EPITAXIAL GROWTH;

EID: 32644436205     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200510541     Document Type: Article

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