Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors

Journal of the Electrochemical Society

Volumn 157, Issue 8, 2010, Pages

  Cheng, C H ^a   Deng, C K ^b   Hsu, H H ^b   Chen, P C ^c   Liou, B H ^d   Chin, Albert ^b   Yeh, F S ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c CHUNG HUA UNIVERSITY   (Taiwan)

^d NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG CAPACITORS; CAPACITANCE VOLTAGE; ELECTRICAL PROPERTY; HIGH-CAPACITANCE DENSITY; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; LANTHANIDES; LOW LEAKAGE; LOW-LEAKAGE CURRENT; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; TIO;

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; LANTHANUM ALLOYS; METAL INSULATOR BOUNDARIES; RARE EARTH ELEMENTS;

MIM DEVICES;

EID: 77954718362     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3439668     Document Type: Article

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