Frequency-dependent capacitance reduction in high-k AlTiO x and Al 2O 3 gate dielectrics from IF to RF frequency range

IEEE Electron Device Letters

Volumn 23, Issue 4, 2002, Pages 203-205

  Chen, S B ^b   Lai, C H ^d   Chan, K T ^b   Chin, Albert ^a,b   Hsieh, J C ^c   Liu, J ^c   Chou, J H ^b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^d NONE

Author keywords

Dielectric constant; Frequency dependence; High k; Loss tangent; RF

Indexed keywords

ALUMINUM OXIDE; ALUMINUM TITANIUM OXIDE; CAPACITANCE REDUCTION; GATE DIELECTRICS; INTERMEDIATE FREQUENCY;

CAPACITANCE; DIELECTRIC MATERIALS; PERMITTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA;

GATES (TRANSISTOR);

EID: 0036539415     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.992839     Document Type: Article

References (16)

1. 2 gate dielectrics with dual poly-Si gate electrodes
2. +-polysilicon gate
3. 4 gate dielectric for deep sub-micron CMOS technology
4. it
5. Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics
6. Transmission line noise from standard and proton-implanted Si
7. RF loss and crosstalk on extremely high resistivity (10k-1MΩ-cm) Si fabricated by ion implantation
8. The performance limiting factors as RF MOSFET's scale down
9. Thin oxides with in-situ native oxide removal
10. Integrated antennas on Si, proton-implanted Si and Si-on-quartz
11. High-Q capacitors implemented in a CMOS process for low-power wireless applications