Band gap enhancement and electrical properties of La2 O3 films doped with Y2 O3 as high- k gate insulators

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Zhao, Yi ^a   Kita, Koji ^a   Kyuno, Kentaro ^a,b   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ENERGY GAP; LANTHANUM; METAL INSULATOR BOUNDARIES; MIS DEVICES; OZONE WATER TREATMENT; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; YTTRIUM ALLOYS;

BAND GAPS; CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRICAL PROPERTIES; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGES; GATE VOLTAGES; HIGH-K GATE INSULATORS; LOW-LEAKAGE CURRENTS; METAL-INSULATOR-METAL CAPACITORS; METAL-INSULATOR-SEMICONDUCTOR CAPACITORS; OPTICAL BAND-GAP; VOLTAGE DEPENDENCES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 59349087551     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3075954     Document Type: Article

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