High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 379-382

  Hu, Hang ^a   Ding, Shi Jin ^a,b   Lim, H F ^a   Zhu, Chunxiang ^a   Li, M F ^a,b   Kim, S J ^a   Yu, X F ^a   Chen, J H ^a   Yong, Y F ^a   Cho, Byung Jin ^a   Chan, D S H ^a   Rustagi, Subhash C ^b   Yu, M B ^b   Tung, C H ^b   Du, Anyan ^b   My, Doan ^b   Foo, P D ^b   Chin, Albert ^c   Kwong, Dim Lee ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE QUALITY; SHUNT ELEMENTS;

ALUMINUM COMPOUNDS; CAPACITANCE MEASUREMENT; GROWTH (MATERIALS); HAFNIUM COMPOUNDS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MOS CAPACITORS; PERMITTIVITY; SIGNAL PROCESSING; SILICA; THICKNESS MEASUREMENT; VOLTAGE MEASUREMENT;

MIM DEVICES;

EID: 17644439382     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

1. M. Armacost et al., "A high reliability metal insulator metal capacitor for 0.18 μm copper technology", IEDM 2000, p.157.
2. C. H. Ng. et al., "Characterization and comparison of two metal-insulator-metal capacitor schemes in 0.13 μm copper dual damascene metallization process for mixed-mode and RF applications", IEDM 2002, p.241.
3. P.Zurcher et al., "Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies", IEDM2000, p.153.
4. T. Yoshitomi et al., "High performance MIM capacitor for RF BiCMOS/CMOS LSIs", BCTM, 1999, p.133.
5. R. B. van Dover, et al., "Advanced dielectrics for gate oxide, DRAM and RF capacitors" IEDM 1998, p.823.
6. 2 dielectrics", EDL. Vol. 24, 2003.
7. 5/Cu MIM structure for SoC applications featuring a single-mask add-on process", IEDM 2002, p.940.
8. x dielectrics", MTT-S. 2003. p.507.
9. Y. L. Tu. et al., "Characterization and comparison of high-k metal-insulator-metal (MiM) capacitors in 0.13 μm Cu BEOL for mixed-mode and RF applications", VLSI symp. 2003, p.79.
10. 2 MIM capacitors for RF/Mixed IC applications", VLSI symp. 2003, p.77.
11. G.D.Wilk et al., "High-k gate dielectrics: current status and materials properties considerations", JAP. 89, p.5243 (2001).
12. 3 Laminate capacitor technology using Hf liquid precursor for sub-100 nm DRAMs", IEDM, 2002, p.221
13. P.J.van Wijnen et al., IEEE BCTM 1987, p.70.
14. IC-CAP manual, Hewlett Packard, 1998.
15. ITRS roadmap 2002.