Comparing High Mobility InGaAs FETs with Si and GOI Devices

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2006, Pages 85-86

  Liao, C C ^a   Kao, H L ^a   Chin, Albert ^a   Yu, D S ^a   Li, M F ^b   Zhu, C ^b   McAlister, S P ^c  

^a National Chiao Tiang University   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GERMANIUM OXIDES; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; INDIUM ALLOYS; INDIUM ARSENIDE; INDIUM PHOSPHIDE; LEAKAGE CURRENTS; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; WIDE BAND GAP SEMICONDUCTORS;

'CURRENT; DISLOCATION FREE; GATE STACKS; GATE-LEAKAGE CURRENT; HIGH MOBILITY; INALAS/INGAAS; INGAAS/INALAS; SCHOTTKY GATE; SI SUBSTRATES; SIO 2;

ALUMINUM OXIDE;

EID: 48749096200     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. D. S. Yu et al, IEDM Tech. Dig., pp. 181-184, 2004.
2. C. H. Huang et al, Symp. On VLSI Tech., pp. 119-120, 2003.
3. C. H. Huang et al, IEDM Tech. Dig., pp. 319-322, 2003.
4. A. Chin et al, IEEE EDL, vol. 18, no. 4, pp. 157-159, 1997.
5. S. Zhu et al, IEEE EDL, vol. 26, no. 2, pp. 81-83, 2005.
6. S. Zhu et al, IEEE EDL, vol. 25, no. 8, pp. 565-567, 2004.
7. U.S. Kim et al. to be published.