Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

IEEE Electron Device Letters

Volumn 24, Issue 8, 2003, Pages 506-508

  Ng, C H ^a   Chew, K W ^a   Chu, S F ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Breakdown field strength; Dielectric constant; MIM capacitor; Nondispersive; Quality factor; RF; Silicon nitride; Silicon oxynitride; Temperature coefficient of capacitance; Voltage coefficient of capacitance

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MIM DEVICES; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; Q FACTOR MEASUREMENT; SILICON NITRIDE; TEMPERATURE;

BREAKDOWN FIELD STRENGTH; MIM CAPACITORS; NONDISPERSIVE; SILICON OXYNITRIDE; TEMPERATURE COEFFICIENT OF CAPACITANCE; VOLTAGE COEFFICIENT OF CAPACITANCE;

CAPACITORS;

EID: 0042888789     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815154     Document Type: Article

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