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Volumn 96, Issue 26, 2010, Pages

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

(12) Johnson, B C a Tettamanzi, G C b Alves, A D C a Thompson, S a Yang, C a Verduijn, J b Mol, J A b Wacquez, R c Vinet, M c Sanquer, M c Rogge, S b Jamieson, D N a

a UNIVERSITY OF MELBOURNE (Australia)

b DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

c CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREES OF FREEDOM; DOPANT IMPLANTATION; DOPANT NUMBERS; ELECTRONIC STOPPING; FIELD-EFFECT; ION IRRADIATION; ION STOPPING; NANO SCALE; NANOSCALE DEVICE; NANOSCALE METALS; NUCLEAR STOPPING; SINGLE ATOMS; TRANSISTOR CHANNELS;

DOPING (ADDITIVES); IONS; MODULATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSISTORS;

DRAIN CURRENT;

EID: 77954341803 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3458783 Document Type: Article

Times cited : (30)

References (30)

1
- 77954321798
- International technology roadmafor semiconductors
- "International technology roadmap for semiconductors," http://www.itrs.net/ (2007).
- (2007)

2
- 48749117974
- ZZZZZZ 1745-2473,. 10.1038/nphys994
- G. Lansbergen, R. Rahman, C. J. Wellard, I. Woo, J. Caro, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge, Nat. Phys. ZZZZZZ 1745-2473 4, 656 (2008). 10.1038/nphys994
- (2008) Nat. Phys. , vol.4 , pp. 656
- Lansbergen, G.¹ Rahman, R.² Wellard, C.J.³ Woo, I.⁴ Caro, J.⁵ Collaert, N.⁶ Biesemans, S.⁷ Klimeck, G.⁸ Hollenberg, L.C.L.⁹ Rogge, S.¹⁰

3
- 76649142041
- NNAABX 1748-3387,. 10.1038/nnano.2009.373
- M. Pierre, R. Wacquez, X. Jehl, M. Sanquer, M. Vinet, and O. Cueto, Nat. Nanotechnol. NNAABX 1748-3387 5, 133 (2010). 10.1038/nnano.2009.373
- (2010) Nat. Nanotechnol. , vol.5 , pp. 133
- Pierre, M.¹ Wacquez, R.² Jehl, X.³ Sanquer, M.⁴ Vinet, M.⁵ Cueto, O.⁶

4
- 75749104735
- APPLAB 0003-6951,. 10.1063/1.3297906
- M. Klein, J. A. Mol, J. Verduijn, G. P. Lansbergen, S. Rogge, R. D. Levine, and F. Remacle, Appl. Phys. Lett. APPLAB 0003-6951 96, 043107 (2010). 10.1063/1.3297906
- (2010) Appl. Phys. Lett. , vol.96 , pp. 043107
- Klein, M.¹ Mol, J.A.² Verduijn, J.³ Lansbergen, G.P.⁴ Rogge, S.⁵ Levine, R.D.⁶ Remacle, F.⁷

5
- 0032516155
- A silicon-based nuclear spin quantum computer
- DOI 10.1038/30156
- B. E. Kane, Nature (London) NATUAS 0028-0836 393, 133 (1998). 10.1038/30156 (Pubitemid 28242245)
- (1998) Nature , vol.393 , Issue.6681 , pp. 133-137
- Kane, B.E.¹

6
- 0034226818
- PLRAAN 1050-2947,. 10.1103/PhysRevA.62.012306
- R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roychowdhury, T. Mor, and D. DiVincenzo, Phys. Rev. A PLRAAN 1050-2947 62, 012306 (2000). 10.1103/PhysRevA.62.012306
- (2000) Phys. Rev. A , vol.62 , pp. 012306
- Vrijen, R.¹ Yablonovitch, E.² Wang, K.³ Jiang, H.W.⁴ Balandin, A.⁵ Roychowdhury, V.⁶ Mor, T.⁷ Divincenzo, D.⁸

7
- 0042735693
- PRBMDO 0163-1829,. 10.1103/PhysRevB.67.121301
- M. Friesen, P. Rugheimer, D. E. Savage, M. G. Lagally, D. W. van der Weide, R. Joynt, and M. A. Eriksson, Phys. Rev. B PRBMDO 0163-1829 67, 121301 (2003). 10.1103/PhysRevB.67.121301
- (2003) Phys. Rev. B , vol.67 , pp. 121301
- Friesen, M.¹ Rugheimer, P.² Savage, D.E.³ Lagally, M.G.⁴ Van Der Weide, D.W.⁵ Joynt, R.⁶ Eriksson, M.A.⁷

8
- 33746100288
- Two-dimensional architectures for donor-based quantum computing
- DOI 10.1103/PhysRevB.74.045311
- L. C. L. Hollenberg, A. D. Greentree, A. G. Fowler, and C. J. Wellard, Phys. Rev. B PRBMDO 0163-1829 74, 045311 (2006). 10.1103/PhysRevB.74.045311 (Pubitemid 44079263)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.74 , Issue.4 , pp. 045311
- Hollenberg, L.C.L.¹ Greentree, A.D.² Fowler, A.G.³ Wellard, C.J.⁴

9
- 20944433630
- Controlled shallow single-ion implantation in silicon using an active substrate for sub- 20-keV ions
- DOI 10.1063/1.1925320, 202101
- D. N. Jamieson, C. Yang, T. Hopf, S. M. Hearne, C. I. Pakes, S. Prawer, M. Mitic, E. Gauja, S. E. Andresen, F. E. Hudson, A. S. Dzurak, and R. G. Clark, Appl. Phys. Lett. APPLAB 0003-6951 86, 202101 (2005). 10.1063/1.1925320 (Pubitemid 40865916)
- (2005) Applied Physics Letters , vol.86 , Issue.20 , pp. 1-3
- Jamieson, D.N.¹ Yang, C.² Hopf, T.³ Hearne, S.M.⁴ Pakes, C.I.⁵ Prawer, S.⁶ Mitic, M.⁷ Gauja, E.⁸ Andresen, S.E.⁹ Hudson, F.E.¹⁰ Dzurak, A.S.¹¹ Clark, R.G.¹²

10
- 36048992888
- Detection of low energy single ion impacts in micron scale transistors at room temperature
- DOI 10.1063/1.2805634
- A. Batra, C. D. Weis, J. Reijonen, A. Persaud, T. Schenkel, S. Cabrini, C. C. Lo, and J. Bokor, Appl. Phys. Lett. APPLAB 0003-6951 91, 193502 (2007). 10.1063/1.2805634 (Pubitemid 350097922)
- (2007) Applied Physics Letters , vol.91 , Issue.19 , pp. 193502
- Batra, A.¹ Weis, C.D.² Reijonen, J.³ Persaud, A.⁴ Schenkel, T.⁵ Cabrini, S.⁶ Lo, C.C.⁷ Bokor, J.⁸

11
- 34547449962
- Charge state control and relaxation in an atomically doped silicon device
- DOI 10.1021/nl070797t
- S. E. S. Andresen, R. Brenner, C. J. Wellard, C. Yang, T. Hopf, C. C. Escott, R. G. Clark, A. S. Dzurak, D. N. Jamieson, and L. C. L. Hollenberg, Nano Lett. NALEFD 1530-6984 7, 2000 (2007). 10.1021/nl070797t (Pubitemid 47197581)
- (2007) Nano Letters , vol.7 , Issue.7 , pp. 2000-2003
- Andresen, S.E.S.¹ Brenner, R.² Wellard, C.J.³ Yang, C.⁴ Hopf, T.⁵ Escott, C.C.⁶ Clark, R.G.⁷ Dzurak, A.S.⁸ Jamieson, D.N.⁹ Hollenberg, L.C.L.¹⁰

12
- 49149131636
- APPLAB 0003-6951,. 10.1063/1.2967211
- J. A. Seamons, E. Bielejec, M. S. Carroll, and K. D. Childs, Appl. Phys. Lett. APPLAB 0003-6951 93, 043124 (2008). 10.1063/1.2967211
- (2008) Appl. Phys. Lett. , vol.93 , pp. 043124
- Seamons, J.A.¹ Bielejec, E.² Carroll, M.S.³ Childs, K.D.⁴

13
- 27144459867
- Enhancing semiconductor device performance using ordered dopant arrays
- DOI 10.1038/nature04086, PII N04086
- T. Shinada, S. Okamoto, T. Kobayashi, and I. Ohdomari, Nature (London) NATUAS 0028-0836 437, 1128 (2005). 10.1038/nature04086 (Pubitemid 41509346)
- (2005) Nature , vol.437 , Issue.7062 , pp. 1128-1131
- Shinada, T.¹ Okamoto, S.² Kobayashi, T.³ Ohdomari, I.⁴

14
- 29044450728
- Ion implantation with scanning probe alignment
- DOI 10.1116/1.2062628
- A. Persaud, J. A. Liddle, T. Schenkel, J. Bokor, T. Ivanov, and I. W. Rangelow, J. Vac. Sci. Technol. B JVTBD9 1071-1023 23, 2798 (2005). 10.1116/1.2062628 (Pubitemid 41788759)
- (2005) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.23 , Issue.6 , pp. 2798-2800
- Persaud, A.¹ Liddle, J.A.² Schenkel, T.³ Bokor, J.⁴ Ivanov, Tzv.⁵ Rangelow, I.W.⁶

15
- 21644441650
- Quantum computer development with single ion implantation
- DOI 10.1007/s11128-004-3879-1
- A. Persaud, S. J. Park, J. A. Liddle, I. W. Rangelow, J. Bokor, R. Keller, F. I. Allen, D. H. Schneider, and T. Schenkel, Quantum Inf. Process. QIPUAT 1570-0755 3, 233 (2004). 10.1007/s11128-004-3879-1 (Pubitemid 41218549)
- (2004) Quantum Information Processing , vol.3 , Issue.1-5 , pp. 233-245
- Persaud, A.¹ Park, S.J.² Liddle, J.A.³ Rangelow, I.W.⁴ Bokor, J.⁵ Keller, R.⁶ Allen, F.I.⁷ Schneider, D.H.⁸ Schenkel, T.⁹

16
- 57249104943
- JVTBD9 1071-1023,. 10.1116/1.2968614
- C. D. Weis, A. Schuh, A. Batra, A. Persaud, I. W. Rangelow, J. Bokor, C. C. Lo, S. Cabrini, E. Sideras-Haddad, G. D. Fuchs, R. Hanson, D. D. Awschalom, and T. Schenkel, J. Vac. Sci. Technol. B JVTBD9 1071-1023 26, 2596 (2008). 10.1116/1.2968614
- (2008) J. Vac. Sci. Technol. B , vol.26 , pp. 2596
- Weis, C.D.¹ Schuh, A.² Batra, A.³ Persaud, A.⁴ Rangelow, I.W.⁵ Bokor, J.⁶ Lo, C.C.⁷ Cabrini, S.⁸ Sideras-Haddad, E.⁹ Fuchs, G.D.¹⁰ Hanson, R.¹¹ Awschalom, D.D.¹² Schenkel, T.¹³

17
- 48249147011
- NNOTER 0957-4484,. 10.1088/0957-4484/19/34/345202
- T. Shinada, T. Kurosawa, H. Nakayama, Y. Zhu, M. Hori, and I. Ohdomari, Nanotechnology NNOTER 0957-4484 19, 345202 (2008). 10.1088/0957-4484/19/34/ 345202
- (2008) Nanotechnology , vol.19 , pp. 345202
- Shinada, T.¹ Kurosawa, T.² Nakayama, H.³ Zhu, Y.⁴ Hori, M.⁵ Ohdomari, I.⁶

18
- 75749143372
- EDLEDZ 0741-3106,. 10.1109/LED.2009.2036134
- G. C. Tettamanzi, A. Paul, G. P. Lansbergen, J. Verduijn, S. Lee, N. Collaert, S. Biesemans, G. Klimeck, and S. Rogge, IEEE Electron Device Lett. EDLEDZ 0741-3106 31, 150 (2010). 10.1109/LED.2009.2036134
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 150
- Tettamanzi, G.C.¹ Paul, A.² Lansbergen, G.P.³ Verduijn, J.⁴ Lee, S.⁵ Collaert, N.⁶ Biesemans, S.⁷ Klimeck, G.⁸ Rogge, S.⁹

19
- 77954316804
- APPLAB 0003-6951,. 10.1063/1.3273857
- M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli, and M. Fanciulli, Appl. Phys. Lett. APPLAB 0003-6951 95, 242107 (2009). 10.1063/1.3273857
- (2009) Appl. Phys. Lett. , vol.95 , pp. 242107
- Pierre, M.¹ Wacquez, R.² Roche, B.³ Jehl, X.⁴ Sanquer, M.⁵ Vinet, M.⁶ Prati, E.⁷ Belli, M.⁸ Fanciulli, M.⁹

20
- 0031548958
- NIMBEU 0168-583X,. 10.1016/S0168-583X(97)00183-3
- D. N. Jamieson, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 130, 706 (1997). 10.1016/S0168-583X(97)00183-3
- (1997) Nucl. Instrum. Methods Phys. Res. B , vol.130 , pp. 706
- Jamieson, D.N.¹

21
- 77954344481
- PADRE," ().
- M. R. Pinto, K. Smith, M. A. Alam, S. Clark, X. Wang, G. Klimeck, and D. Vasileska, " PADRE," (2006), http://nanohub.org/resources/941.
- (2006)
- Pinto, M.R.¹ Smith, K.² Alam, M.A.³ Clark, S.⁴ Wang, X.⁵ Klimeck, G.⁶ Vasileska, D.⁷

22
- 36449004449
- JAPIAU 0021-8979,. 10.1063/1.348689
- L. P. Trombetta, F. J. Feigl, and R. J. Zeto, J. Appl. Phys. JAPIAU 0021-8979 69, 2512 (1991). 10.1063/1.348689
- (1991) J. Appl. Phys. , vol.69 , pp. 2512
- Trombetta, L.P.¹ Feigl, F.J.² Zeto, R.J.³

23
- 77954344648
- The stopping and range of ions in solids (SRIM),"
- J. F. Ziegler, J. P. Biersack, and U. Littmark, " The stopping and range of ions in solids (SRIM)," (1996), http://www.srim.org/.
- (1996)
- Ziegler, J.F.¹ Biersack, J.P.² Littmark, U.³

24
- 74849127703
- NALEFD 1530-6984,. 10.1021/nl901635j
- K. Y. Tan, K. W. Chan, M. Möttönen, A. Morello, C. Yang, J. v. Donkelaar, A. Alves, J. -M. Pirkkalainen, D. N. Jamieson, R. G. Clark, and A. S. Dzurak, Nano Lett. NALEFD 1530-6984 10, 11 (2010). 10.1021/nl901635j
- (2010) Nano Lett. , vol.10 , pp. 11
- Tan, K.Y.¹ Chan, K.W.² Möttönen, M.³ Morello, A.⁴ Yang, C.⁵ J, V.D.⁶ Alves, A.⁷ Pirkkalainen, J.-M.⁸ Jamieson, D.N.⁹ Clark, R.G.¹⁰ Dzurak, A.S.¹¹

25
- 0018874490
- 2 layers at room temperature
- DOI 10.1063/1.327357
- R. F. DeKeersmaecker and D. J. DiMaria, J. Appl. Phys. JAPIAU 0021-8979 51, 532 (1980). 10.1063/1.327357 (Pubitemid 11432620)
- (1980) Journal of Applied Physics , vol.51 , Issue.1 , pp. 532-539
- DeKeersmaecker, R.F.¹ DiMaria, D.J.²

26
- 34447259734
- (World Scientific, Singapore),. 10.1142/9789812794703-0012
- S. Cristoloveanu and V. Ferlet-Cavrois, Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices (World Scientific, Singapore, 2004), p. 181. 10.1142/9789812794703-0012
- (2004) Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices , pp. 181
- Cristoloveanu, S.¹ Ferlet-Cavrois, V.²

27
- 33847333096
- Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects
- DOI 10.1016/j.sse.2007.01.016, PII S003811010700010X
- S. Eminente, S. Cristoloveanu, R. Clerc, A. Ohata, and G. Ghibaudo, Solid-State Electron. SSELA5 0038-1101 51, 239 (2007). 10.1016/j.sse.2007.01.016 (Pubitemid 46330458)
- (2007) Solid-State Electronics , vol.51 , Issue.2 , pp. 239-244
- Eminente, S.¹ Cristoloveanu, S.² Clerc, R.³ Ohata, A.⁴ Ghibaudo, G.⁵

28
- 0442311975
- SSELA5 0038-1101,. 10.1016/j.sse.2003.09.033
- F. Dauǵ, J. Pretet, S. Cristoloveanu, A. Vandooren, L. Mathew, J. Jomaah, and B. Y. Nguyen, Solid-State Electron. SSELA5 0038-1101 48, 535 (2004). 10.1016/j.sse.2003.09.033
- (2004) Solid-State Electron. , vol.48 , pp. 535
- Dauǵ, F.¹ Pretet, J.² Cristoloveanu, S.³ Vandooren, A.⁴ Mathew, L.⁵ Jomaah, J.⁶ Nguyen, B.Y.⁷

29
- 0022600166
- Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors
- DOI 10.1063/1.96974
- P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett. APPLAB 0003-6951 48, 133 (1986). 10.1063/1.96974 (Pubitemid 17615590)
- (1986) Applied Physics Letters , vol.48 , Issue.2 , pp. 133-135
- McWhorter, P.J.¹ Winokur, P.S.²

30
- 0024103902
- IEEPAD 0018-9219,. 10.1109/5.90114
- J. Srour and J. McGarrity, Proc. IEEE IEEPAD 0018-9219 76, 1443 (1988). 10.1109/5.90114
- (1988) Proc. IEEE , vol.76 , pp. 1443
- Srour, J.¹ McGarrity, J.²

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