Thermionic emission as a tool to study transport in undoped nFinFETs

IEEE Electron Device Letters

Volumn 31, Issue 2, 2010, Pages 150-152

  Tettamanzi, Giuseppe C ^a   Paul, Abhijeet ^b   Lansbergen, Gabriel P ^a   Verduijn, Jan ^a   Lee, Sunhee ^b   Collaert, Nadine ^c   Biesemans, Serge ^c   Klimeck, Gerhard ^b   Rogge, Sven ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Purdue University   (United States)

^c IMEC   (Belgium)

Author keywords

FinFET; Thermionic emission; Tight binding (TB)

Indexed keywords

ANALYTICAL CALCULATION; BARRIER HEIGHTS; CROSS SECTIONAL AREA; DEVICE CHARACTERISTICS; GATE VOLTAGES; SUBTHRESHOLD; THERMALLY ACTIVATED; TIGHT BINDING; TRIPLE-GATE MOSFETS;

TERBIUM ALLOYS;

THERMIONIC EMISSION;

EID: 75749143372     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2036134     Document Type: Article

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