Detection of low energy single ion impacts in micron scale transistors at room temperature

Applied Physics Letters

Volumn 91, Issue 19, 2007, Pages

  Batra, A ^a   Weis, C D ^a   Reijonen, J ^a   Persaud, A ^a   Schenkel, T ^a   Cabrini, S ^a   Lo, C C ^b   Bokor, J ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; DRAIN CURRENT; GATE DIELECTRICS;

GATE ELECTRODES; INTERLAYER DIELECTRICS; MICRON SCALE TRANSISTORS; SINGLE ION IMPACTS;

FIELD EFFECT TRANSISTORS;

EID: 36048992888     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2805634     Document Type: Article

References (24)

1. R. W. Keyes, Rep. Prog. Phys. 68, 2701 (2005).
2. T. Shinada, S. Okamoto, T. Kobayashi, and I. Ohdomari, Nature (London) 437, 1128 (2005).
3. D. N. Jamieson, C. Yang, T. Hopf, S. M. Hearne, C. I. Pakes, S. Prawer, M. Mitic, E. Gauja, S. E. Andersen, F. E. Hudson, A. S. Dzurak, and R. G. Clark, Appl. Phys. Lett. 86, 202101 (2005).
4. T. Schenkel, A. Persaud, S. J. Park, J. Nilsson, J. Bokor, J. A. Liddle, R. Keller, D. H. Schneider, D. W. Cheng, and D. E. Humphries, J. Appl. Phys. 94, 7017 (2003).
5. T. Schenkel, A. M. Tyryshkin, R. de Sousa, K. B. Whaley, J. Bokor, J. A. Liddle, A. Persaud, J. Shangkuan, I. Chakarov, and S. A. Lyon, Appl. Phys. Lett. 88, 112101 (2006).
6. H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.97. 206805 97, 206805 (2006); Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi, Appl. Phys. Lett. 0003-6951 10.1063/1.2679254 90, 102106 (2007); L. E. Calvet, R. G. Wheeler, and M. A. Reed, Phys. Rev. Lett. 98, 096805 (2007).
7. H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.97. 206805 97, 206805 (2006); Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi, Appl. Phys. Lett. 0003-6951 10.1063/1.2679254 90, 102106 (2007); L. E. Calvet, R. G. Wheeler, and M. A. Reed, Phys. Rev. Lett. 98, 096805 (2007).
8. H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.97. 206805 97, 206805 (2006); Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi, Appl. Phys. Lett. 0003-6951 10.1063/1.2679254 90, 102106 (2007); L. E. Calvet, R. G. Wheeler, and M. A. Reed, Phys. Rev. Lett. 98, 096805 (2007).
9. B. E. Kane, Nature (London) 0028-0836 10.1038/30156 393, 133 (1998); S. Das Sarma, R. de Sousa, X. Hu, and B. Koiler, Solid State Commun. 133, 737 (2005).
10. B. E. Kane, Nature (London) 0028-0836 10.1038/30156 393, 133 (1998); S. Das Sarma, R. de Sousa, X. Hu, and B. Koiler, Solid State Commun. 133, 737 (2005).
11. H. Ahmed, Physica B 227, 259 (1996).
12. T. R. Oldham and F. B. McLean, IEEE Trans. Nucl. Sci. 50, 483 (2003).
13. T. Shinada, T. Kobayashi, H. Nakayama, T. Kurosawa, and I. Ohdomari, in Book of Abstracts, 15th International Conference on Ion Beam Modification of Materials, Taormina, 18-22 September 2006 (unpublished), p. 47.
14. M. J. Kirton and M. J. Uren, Adv. Phys. 38, 367 (1989).
15. C. C. Lo, A. M. Tyryshkin, T. Schenkel, J. Bokor, and S. A. Lyon, arXiv:cond-mat/0710.5164v1
16. S. J. Randolph, J. D. Fowlkes, and P. D. Rack, J. Appl. Phys. 98, 034902 (2005).
17. H. F. Winters and J. W. Coburn, Appl. Phys. Lett. 34, 70 (1979).
18. A. Persaud, S. J. Park, J. A. Liddle, J. Bokor, I. W. Rangelow, and T. Schenkel, Nano Lett. 5, 1087 (2005).
19. J. Reijonen, M. Eardley, R. Gough, K. Leung, and R. Thomae, Nucl. Instrum. Methods Phys. Res. A 511, 301 (2003).
20. T. Schenkel, A. Persaud, A. Kraemer, J. W. McDonald, J. P. Holder, A. V. Hamza, and D. H. Schneider, Rev. Sci. Instrum. 73, 663 (2002).
21. F. R. Bradbury, A. M. Tyryshkin, G. Sabouret, J. Bokor, T. Schenkel, and S. A. Lyon, Phys. Rev. Lett. 97, 176404 (2006).
22. Ionizing Radiation Effects in MOS Devices & Circuits, edited by, T. P. Ma, and, Paul V. Dressendorfer, (Wiley, New York, 1989), 1-47.
23. T. Schenkel, A. V. Hamza, A. V. Barnes, and D. H. Schneider, Prog. Surf. Sci. 61, 23 (1999).
24. A. De Marco, W. Bandy, S. Parsa, H. Kaufmann, and J. Melngailis, J. Vac. Sci. Technol. B 23, 2811 (2005).