Ternary logic implemented on a single dopant atom field effect silicon transistor

Applied Physics Letters

Volumn 96, Issue 4, 2010, Pages

  Klein, M ^a   Mol, J A ^b   Verduijn, J ^b   Lansbergen, G P ^b   Rogge, S ^b   Levine, R D ^a,d   Remacle, F ^a,c  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF LIÈGE   (Belgium)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE; CURRENT FLOWING; DOPANT ATOMS; FIELD EFFECTS; FIN FIELD EFFECT TRANSISTORS; PROOF OF PRINCIPLES; SILICON TRANSISTORS; TERNARY LOGIC; TWO CHANNEL; VOLTAGE GAIN;

FINS (HEAT EXCHANGE); MESFET DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 75749104735     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3297906     Document Type: Article

References (16)

1. See supplementary material at http://dx.doi.org/10.1063/1.3297906 E-APPLAB-96-027004 for more about ternary logic and an additional experimental plot.
2. D. V. Averin, A. N. Korotkov, and K. K. Likharev, Phys. Rev. B PRBMDO 0163-1829 44, 6199 (1991). 10.1103/PhysRevB.44.6199
3. A. N. Korotkov, D. V. Averin, and K. K. Likharev, Physica B PHYBE3 0921-4526 165, 927 (1990). 10.1016/S0921-4526(09)80049-5
4. K. K. Likharev, Proc. IEEE IEEPAD 0018-9219 87, 606 (1999). 10.1109/5.752518
5. J. R. Tucker, J. Appl. Phys. JAPIAU 0021-8979 72, 4399 (1992). 10.1063/1.352206
6. P. Keshavarzian and K. Navi, Int. J. Nanotechnol. IJNNBK 1475-7435 6, 942 (2009). 10.1504/IJNT.2009.027557
7. A. Raychowdhury and K. Roy, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 4, 168 (2005). 10.1109/TNANO.2004.842068 (Pubitemid 40429098)
8. M. Klein, S. Rogge, F. Remacle, and R. D. Levine, Nano Lett. NALEFD 1530-6984 7, 2795 (2007). 10.1021/nl071376e (Pubitemid 47527038)
9. B. Hayes, Am. Sci. AMSCAC 0003-0996 89, 490 (2001).
10. S. L. Hurst, IEEE Trans. Comput. ITCOB4 0018-9340 C-33, 1160 (1984). 10.1109/TC.1984.1676392
11. F. Remacle, J. R. Heath, and R. D. Levine, Proc. Natl. Acad. Sci. U.S.A. PNASA6 0027-8424 102, 5653 (2005). 10.1073/pnas.0501623102 (Pubitemid 40559614)
12. M. Klein, G. P. Lansbergen, J. A. Mol, S. Rogge, R. D. Levine, and F. Remacle, ChemPhysChem CPCHFT 1439-4235 10, 162 (2009). 10.1002/cphc.200800568
13. G. P. Lansbergen, R. Rahman, C. J. Wellard, I. Woo, J. Caro, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge, Nat. Phys. ZZZZZZ 1745-2473 4, 656 (2008). 10.1038/nphys994
14. H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans, Phys. Rev. Lett. PRLTAO 0031-9007 97, 206805 (2006). 10.1103/PhysRevLett.97.206805 (Pubitemid 44771867)
15. M. Klein, R. D. Levine, and F. Remacle, J. Appl. Phys. JAPIAU 0021-8979 104, 044509 (2008). 10.1063/1.2970060
16. P. Horowitz and W. Hill, The Art of Electronics, 2nd ed. (Cambridge University Press, Cambridge, 1989), pp. 1031-1032.