Single atom doping for quantum device development in diamond and silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 2596-2600

  Weis, C D ^g   Schuh, A ^g   Batra, A ^a   Persaud, A ^a   Rangelow, I W ^b   Bokor, J ^a,c   Lo, C C ^c   Cabrini, S ^a   Sideras Haddad, E ^d   Fuchs, G D ^e   Hanson, R ^f   Awschalom, D D ^e   Schenkel, T ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF THE WITWATERSRAND   (South Africa)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^g NONE

Author keywords

[No Author keywords available]

Indexed keywords

ARRAY FORMATIONS; CURRENT CHANGES; CURRENT TRANSIENTS; DOPANT ATOMS; DOPANT FLUCTUATIONS; DOPANT SPECIES; INCIDENT IONS; LIMITING FACTORS; QUANTUM COMPUTER ARCHITECTURES; QUANTUM DEVICES; QUANTUM STATES; RELIABLE DETECTIONS; SCANNING FORCE MICROSCOPES; SENSITIVE DETECTIONS; SINGLE ATOMS; SINGLE ION DETECTIONS; SINGLE IONS; SMALL HOLES; SPATIAL RESOLUTIONS; SYSTEMATIC TESTING; TRANSISTOR CHANNELS;

ATOMIC PHYSICS; ATOMS; COLOR CENTERS; COMPUTER ARCHITECTURE; COMPUTER SCIENCE; COMPUTER SYSTEMS; COMPUTER TESTING; COMPUTERS; DIAMONDS; DOPING (ADDITIVES); INDIUM COMPOUNDS; ION BEAMS; ION BOMBARDMENT; ION SOURCES; POINT DEFECTS; QUANTUM COMPUTERS; QUANTUM OPTICS; SILICON;

IONS;

EID: 57249104943     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2968614     Document Type: Article

References (21)

1. R. W. Keyes, Rep. Prog. Phys. 68, 2701 (2005).
2. T. Shinada, S. Okamoto, T. Kobayashi, and I. Ohdomari, Nature (London) 437, 1128 (2005).
3. B. E. Kane, Nature (London) 393, 133 (1998).
4. F. Jelezko and J. Wrachtrup, Phys. Status Solidi A 0031-8965 10.1002/pssa.200671403 203, 3207 (2006); A. D. Greentree, J. Phys.: Condens. Matter 18, S825 (2006).
5. R. Hanson, F. M. Mendoza, R. J. Epstein, and D. D. Awschalom, Phys. Rev. Lett. 97, 087601 (2006).
6. F. J. Ruess, Physica E (Amsterdam) 40, 1006 (2008).
7. A. Persaud, S. J. Park, J. A. Liddle, J. Boker, I. W. Rangelow, and T. Schenkel, Nano Lett. 5, 1087 (2005).
8. A. Persaud, J. A. Liddle, J. Bokor, Tzv. Ivanov, I. W. Rangelow, and T. Schenkel, J. Vac. Sci. Technol. B 23, 2798 (2005).
9. T. Schenkel, Microelectron. Eng. 83, 1814 (2006).
10. W. J. Moberly Chan, D. P. Adam, M. J. Aziz, G. Hobler, and T. Schenkel, MRS Bull. 32, 424 (2007).
11. A. Batra, C. D. Weis, J. Reijonen, A. Persaud, S. Cabrini, C. C. Lo, J. Bokor, and T. Schenkel, Appl. Phys. Lett. 91, 193502 (2007).
12. T. Schenkel, J. A. Liddle, A. Persaud, A. M. Tyryshkin, S. A. Lyon, R. de Sousa, K. B. Whaley, J. Bokor, J. Shangkuan, and I. Chakarov, Appl. Phys. Lett. 88, 112101 (2006).
13. A. Persaud, S. J. Park, J. A. Liddle, I. W. Rangelow, J. Bokor, R. Keller, F. I. Allen, D. H. Schneider, and T. Schenkel, Quantum Inf. Process. 3, 233 (2004).
14. S. Egger, A. Ilie, Y. Fu, J. Chongsathien, D.-J. Kang, and M. E. Welland, Nano Lett. 5, 15 (2005).
15. F. C. Warldermann, Diamond Relat. Mater. 16, 1887 (2007).
16. D. N. Jamieson, Appl. Phys. Lett. 86, 202101 (2005).
17. C. C. Lo, J. Bokor, T. Schenkel, J. He, A. M. Tyryshkin, and S. A. Lyon, Appl. Phys. Lett. 91, 242106 (2007).
18. V. N. Smelyanskiy, A. G. Petukhov, and V. V. Osipov, Phys. Rev. B 72, 081304 (2005).
19. T. Schenkel, V. Radmilovic, E. A. Stach, S.-J. Park, and A. Persaud, J. Vac. Sci. Technol. B 21, 2720 (2003).
20. G. Chai, H. Heinrich, T. Schenkel, and L. Chowa, Appl. Phys. Lett. 91, 103101 (2007).
21. T. Gaebel, Nat. Phys. 2, 408 (2006).