Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment

Semiconductor Science and Technology

Volumn 24, Issue 12, 2009, Pages

  O'Mahony, Donagh ^a   Zimmerman, Walter ^b   Steffen, Sinje ^c   Hilgarth, Just ^b   Maaskant, Pleun ^a   Ginige, Ravin ^a   Lewis, Liam ^a   Lambert, Benoit ^c   Corbett, Brian ^a,d  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b AZUR SPACE Solar Power GmbH   (Germany)

^c EUROPEAN SPACE AGENCY   (Netherlands)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; FORWARD CURRENTS; GAN SUBSTRATE; HIGH TEMPERATURE; HIGH-TEMPERATURE ENVIRONMENT; LONG TERM STABILITY; LONG-TERM OPERATION; LONG-TERM STORAGE; METALIZATIONS; REVERSE VOLTAGES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; STORAGE CONDITION; STORAGE PERIODS; STORAGE TESTS; TEMPERATURE RANGE; THERMAL RUNAWAYS; THERMAL-ANNEALING; THERMIONIC FIELD EMISSION;

DEFECT DENSITY; DIODES; FIELD EMISSION; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES;

GALLIUM ALLOYS;

EID: 77954330868     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/12/125008     Document Type: Article

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