GaN power devices for automotive applications

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2007, Pages 13-16

  Kachi, Tetsu ^a  

^a Rd Management Section   (Japan)

Author keywords

AlGaN GaN HEMT; HV; Normally off; Power device; Vertical device

Indexed keywords

ARSENIC COMPOUNDS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HEALTH; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; IONIZATION OF GASES; MOSFET DEVICES; POWER CONVERTERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

AUTOMOTIVE APPLICATIONS; COMPOUND SEMICONDUCTOR (CS); HIGH BREAKDOWN VOLTAGE (HBV); HYBRID VEHICLES; LOW ON-RESISTANCE; POWER DEVICES;

ELECTRIC EQUIPMENT;

EID: 47249153845     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS07.2007.6     Document Type: Conference Paper

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